JPH0353277B2 - - Google Patents
Info
- Publication number
- JPH0353277B2 JPH0353277B2 JP57064844A JP6484482A JPH0353277B2 JP H0353277 B2 JPH0353277 B2 JP H0353277B2 JP 57064844 A JP57064844 A JP 57064844A JP 6484482 A JP6484482 A JP 6484482A JP H0353277 B2 JPH0353277 B2 JP H0353277B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- aln
- substrate
- crystal
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 30
- 239000002994 raw material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
- 239000010937 tungsten Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US280145 | 1981-06-30 | ||
| US06/280,145 US4382837A (en) | 1981-06-30 | 1981-06-30 | Epitaxial crystal fabrication of SiC:AlN |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS582296A JPS582296A (ja) | 1983-01-07 |
| JPH0353277B2 true JPH0353277B2 (enExample) | 1991-08-14 |
Family
ID=23071874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57064844A Granted JPS582296A (ja) | 1981-06-30 | 1982-04-20 | エピタキシヤル単結晶及びこの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4382837A (enExample) |
| EP (1) | EP0069206B1 (enExample) |
| JP (1) | JPS582296A (enExample) |
| CA (1) | CA1186599A (enExample) |
| DE (1) | DE3265369D1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4489128A (en) * | 1981-06-30 | 1984-12-18 | International Business Machines Corporation | Structure containing epitaxial crystals on a substrate |
| JPS59202398A (ja) * | 1983-05-04 | 1984-11-16 | Showa Alum Corp | 熱交換器用アルミニウム製フイン |
| JPS61291494A (ja) * | 1985-06-19 | 1986-12-22 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| US5326992A (en) * | 1992-07-29 | 1994-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Silicon carbide and SiCAlN heterojunction bipolar transistor structures |
| US5334853A (en) * | 1993-09-29 | 1994-08-02 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor cold electron emission device |
| US5725659A (en) * | 1994-10-03 | 1998-03-10 | Sepehry-Fard; Fareed | Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology |
| RU2097452C1 (ru) * | 1996-02-22 | 1997-11-27 | Юрий Александрович Водаков | Способ эпитаксиального выращивания монокристаллов нитридов металлов 3а группы химических элементов |
| US5954874A (en) * | 1996-10-17 | 1999-09-21 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride from a melt |
| US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
| KR100279737B1 (ko) * | 1997-12-19 | 2001-02-01 | 정선종 | 전계방출소자와 광소자로 구성된 단파장 광전소자 및 그의 제작방법 |
| US6045612A (en) * | 1998-07-07 | 2000-04-04 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride |
| KR100277691B1 (ko) * | 1998-09-17 | 2001-02-01 | 정선종 | 단파장 광전소자 제조용 장치 및 그를 이용한 단파장 광전소자제조방법 |
| US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
| US6063185A (en) * | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| RU2333300C2 (ru) * | 2006-04-26 | 2008-09-10 | Дагестанский государственный университет | СПОСОБ ПОЛУЧЕНИЯ ЭПИТАКСИАЛЬНЫХ ПЛЕНОК РАСТВОРОВ (SiC)1-x(AlN)x |
| JP5621199B2 (ja) * | 2008-04-24 | 2014-11-05 | 住友電気工業株式会社 | Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ |
| JP2009280484A (ja) * | 2008-04-24 | 2009-12-03 | Sumitomo Electric Ind Ltd | Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ |
| JP2009280903A (ja) | 2008-04-24 | 2009-12-03 | Sumitomo Electric Ind Ltd | Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ |
| CA2759530C (en) * | 2009-04-24 | 2015-01-20 | National Institute Of Advanced Industrial Science And Technology | Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal |
| KR101338200B1 (ko) * | 2011-11-30 | 2013-12-06 | 현대자동차주식회사 | 초임계 유체를 이용한 중공 탄소섬유의 제조방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3259509A (en) * | 1962-01-26 | 1966-07-05 | Allis Chalmers Mfg Co | Refractory materials and method of making same |
| US3287478A (en) * | 1964-10-30 | 1966-11-22 | Allis Chalmers Mfg Co | Method of sintering aluminum nitride refractories |
| US3470107A (en) * | 1965-10-15 | 1969-09-30 | Gen Electric | Silicon carbide phosphors |
| NL6615059A (enExample) * | 1966-10-25 | 1968-04-26 | ||
| NL143436B (nl) * | 1966-12-14 | 1974-10-15 | Philips Nv | Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen. |
| US4147572A (en) * | 1976-10-18 | 1979-04-03 | Vodakov Jury A | Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique |
| US4152182A (en) * | 1978-05-15 | 1979-05-01 | International Business Machines Corporation | Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide |
| CA1139791A (en) * | 1978-06-15 | 1983-01-18 | Yorihiro Murata | Sintered silicon carbide-aluminum nitride articles and method of making such articles |
| US4172754A (en) * | 1978-07-17 | 1979-10-30 | National Research Development Corporation | Synthesis of aluminum nitride |
-
1981
- 1981-06-30 US US06/280,145 patent/US4382837A/en not_active Expired - Lifetime
-
1982
- 1982-03-23 CA CA000399190A patent/CA1186599A/en not_active Expired
- 1982-04-20 JP JP57064844A patent/JPS582296A/ja active Granted
- 1982-04-27 DE DE8282103555T patent/DE3265369D1/de not_active Expired
- 1982-04-27 EP EP82103555A patent/EP0069206B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3265369D1 (en) | 1985-09-19 |
| EP0069206B1 (en) | 1985-08-14 |
| US4382837A (en) | 1983-05-10 |
| CA1186599A (en) | 1985-05-07 |
| JPS582296A (ja) | 1983-01-07 |
| EP0069206A1 (en) | 1983-01-12 |
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