JPH035058B2 - - Google Patents

Info

Publication number
JPH035058B2
JPH035058B2 JP57185508A JP18550882A JPH035058B2 JP H035058 B2 JPH035058 B2 JP H035058B2 JP 57185508 A JP57185508 A JP 57185508A JP 18550882 A JP18550882 A JP 18550882A JP H035058 B2 JPH035058 B2 JP H035058B2
Authority
JP
Japan
Prior art keywords
electrode contact
contact window
region
type
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57185508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5975659A (ja
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57185508A priority Critical patent/JPS5975659A/ja
Priority to DE8383306151T priority patent/DE3365885D1/de
Priority to EP83306151A priority patent/EP0107437B1/en
Priority to US06/544,263 priority patent/US4525922A/en
Publication of JPS5975659A publication Critical patent/JPS5975659A/ja
Publication of JPH035058B2 publication Critical patent/JPH035058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57185508A 1982-10-22 1982-10-22 半導体装置の製造方法 Granted JPS5975659A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57185508A JPS5975659A (ja) 1982-10-22 1982-10-22 半導体装置の製造方法
DE8383306151T DE3365885D1 (en) 1982-10-22 1983-10-11 Method of producing a semiconductor device comprising a bipolar transistor and a schottky barrier diode
EP83306151A EP0107437B1 (en) 1982-10-22 1983-10-11 Method of producing a semiconductor device comprising a bipolar transistor and a schottky barrier diode
US06/544,263 US4525922A (en) 1982-10-22 1983-10-21 Method of producing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57185508A JPS5975659A (ja) 1982-10-22 1982-10-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5975659A JPS5975659A (ja) 1984-04-28
JPH035058B2 true JPH035058B2 (en, 2012) 1991-01-24

Family

ID=16172005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57185508A Granted JPS5975659A (ja) 1982-10-22 1982-10-22 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4525922A (en, 2012)
EP (1) EP0107437B1 (en, 2012)
JP (1) JPS5975659A (en, 2012)
DE (1) DE3365885D1 (en, 2012)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080267A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体集積回路装置の製造方法
US4663825A (en) * 1984-09-27 1987-05-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US4622738A (en) * 1985-04-08 1986-11-18 Advanced Micro Devices, Inc. Method of making integrated bipolar semiconductor device by first forming junction isolation regions and recessed oxide isolation regions without birds beak
US4709253A (en) * 1986-05-02 1987-11-24 Amp Incorporated Surface mountable diode
US4853341A (en) * 1987-03-25 1989-08-01 Mitsubishi Denki Kabushiki Kaisha Process for forming electrodes for semiconductor devices using focused ion beams
US4948749A (en) * 1987-03-25 1990-08-14 Mitsubishi Denki Kabushiki Kaisha Process for forming electrodes for semiconductor devices
US5055417A (en) * 1987-06-11 1991-10-08 National Semiconductor Corporation Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
JPH01255265A (ja) * 1988-04-05 1989-10-12 Nec Corp 半導体装置の製造方法
JPH0817180B2 (ja) * 1989-06-27 1996-02-21 株式会社東芝 半導体装置の製造方法
EP0490236A3 (en) * 1990-12-13 1992-08-12 National Semiconductor Corporation Fabrication process for schottky barrier diodes on a substrate
US5208169A (en) * 1991-06-28 1993-05-04 Texas Instruments Incorporated Method of forming high voltage bipolar transistor for a BICMOS integrated circuit
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177076A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd Handotaisochinoseizohoho
US4233337A (en) * 1978-05-01 1980-11-11 International Business Machines Corporation Method for forming semiconductor contacts
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
JPS5654062A (en) * 1979-10-09 1981-05-13 Fujitsu Ltd Production of semiconductor device
US4452645A (en) * 1979-11-13 1984-06-05 International Business Machines Corporation Method of making emitter regions by implantation through a non-monocrystalline layer
JPS56138958A (en) * 1980-03-31 1981-10-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56142664A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
JPS56144577A (en) * 1980-04-10 1981-11-10 Fujitsu Ltd Production of semiconductor device
NL8006827A (nl) * 1980-12-17 1982-07-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4418468A (en) * 1981-05-08 1983-12-06 Fairchild Camera & Instrument Corporation Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes
JPS5870570A (ja) * 1981-09-28 1983-04-27 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5975659A (ja) 1984-04-28
US4525922A (en) 1985-07-02
EP0107437A1 (en) 1984-05-02
EP0107437B1 (en) 1986-09-03
DE3365885D1 (en) 1986-10-09

Similar Documents

Publication Publication Date Title
US4125426A (en) Method of manufacturing semiconductor device
US3858304A (en) Process for fabricating small geometry semiconductor devices
JPH05347383A (ja) 集積回路の製法
JPH0322053B2 (en, 2012)
JPH035058B2 (en, 2012)
US3798080A (en) Method of producing a semiconductor component
USRE30282E (en) Double master mask process for integrated circuit manufacture
JPS5965445A (ja) 半導体素子分離領域の形成方法
JPS59165434A (ja) 半導体装置の製造方法
JP3080400B2 (ja) 半導体装置
US5661079A (en) Contacting process using O-SIPOS layer
JPS62133713A (ja) 電極形成方法およびその電極
JPH0122731B2 (en, 2012)
JPS6225451A (ja) 相補型半導体装置の製造方法
JPS6128231B2 (en, 2012)
JPS6250973B2 (en, 2012)
JPH03231431A (ja) 半導体装置の製造方法及びその半導体装置
JPS58170050A (ja) 半導体装置の製造方法
JPH0117256B2 (en, 2012)
JPH0231495B2 (en, 2012)
JPS62190849A (ja) 半導体装置の製造方法
JPS6115589B2 (en, 2012)
JPS6074613A (ja) 半導体装置の製造方法
JPH0628297B2 (ja) 半導体装置の製造方法
JPS60128633A (ja) 半導体装置ならびにその製造方法