JPH0347589B2 - - Google Patents

Info

Publication number
JPH0347589B2
JPH0347589B2 JP58114615A JP11461583A JPH0347589B2 JP H0347589 B2 JPH0347589 B2 JP H0347589B2 JP 58114615 A JP58114615 A JP 58114615A JP 11461583 A JP11461583 A JP 11461583A JP H0347589 B2 JPH0347589 B2 JP H0347589B2
Authority
JP
Japan
Prior art keywords
mos transistor
drain
polysilicon layer
connection
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58114615A
Other languages
English (en)
Japanese (ja)
Other versions
JPS607172A (ja
Inventor
Kenji Anami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58114615A priority Critical patent/JPS607172A/ja
Publication of JPS607172A publication Critical patent/JPS607172A/ja
Publication of JPH0347589B2 publication Critical patent/JPH0347589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58114615A 1983-06-24 1983-06-24 半導体メモリセル Granted JPS607172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58114615A JPS607172A (ja) 1983-06-24 1983-06-24 半導体メモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58114615A JPS607172A (ja) 1983-06-24 1983-06-24 半導体メモリセル

Publications (2)

Publication Number Publication Date
JPS607172A JPS607172A (ja) 1985-01-14
JPH0347589B2 true JPH0347589B2 (cs) 1991-07-19

Family

ID=14642281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58114615A Granted JPS607172A (ja) 1983-06-24 1983-06-24 半導体メモリセル

Country Status (1)

Country Link
JP (1) JPS607172A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198771A (ja) * 1985-02-28 1986-09-03 Mitsubishi Electric Corp 高抵抗負荷形ｍｏｓスタテイツクｒａｍ
JPH0280629A (ja) * 1989-04-27 1990-03-20 Howa Mach Ltd 篠交換機
JP2784850B2 (ja) * 1991-06-28 1998-08-06 富士写真フイルム株式会社 写真感光材料用易開封性包装体及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS5873151A (ja) * 1981-10-27 1983-05-02 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JPS607172A (ja) 1985-01-14

Similar Documents

Publication Publication Date Title
JPH11297856A5 (cs)
US5517038A (en) Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration
JPH0746702B2 (ja) 半導体記憶装置
JPH0419711B2 (cs)
JPS61187362A (ja) 半導体集積回路装置
JPH0347589B2 (cs)
JPS6235559A (ja) 半導体記憶装置
JP2563803B2 (ja) 半導体記憶装置
KR940000514B1 (ko) 고저항 다결정 실리콘층을 부하소자로 하는 스태틱 램
JPS601863A (ja) 読み出し専用メモリ
JPH0653439A (ja) 半導体記憶装置
JP3153016B2 (ja) 半導体集積回路
JP2876665B2 (ja) 半導体メモリ
JPS6034821B2 (ja) 半導体記憶装置
JPS6221072Y2 (cs)
JP3003184B2 (ja) マスクｒｏｍ
JP3004921B2 (ja) 半導体記憶装置
JPH0621395A (ja) 半導体記憶装置及びその製造方法
JPS6381974A (ja) 半導体集積回路装置の製造方法
JPS5820147B2 (ja) ハンドウタイキオクカイロ
JPH0325947B2 (cs)
JPH0348667B2 (cs)
JPH0722590A (ja) 半導体記憶装置
JPS61120462A (ja) 半導体集積回路装置の製造方法
JPH0345552B2 (cs)