JPH0343769B2 - - Google Patents

Info

Publication number
JPH0343769B2
JPH0343769B2 JP56041327A JP4132781A JPH0343769B2 JP H0343769 B2 JPH0343769 B2 JP H0343769B2 JP 56041327 A JP56041327 A JP 56041327A JP 4132781 A JP4132781 A JP 4132781A JP H0343769 B2 JPH0343769 B2 JP H0343769B2
Authority
JP
Japan
Prior art keywords
film
single crystal
crystal silicon
silicon
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56041327A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57155726A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56041327A priority Critical patent/JPS57155726A/ja
Publication of JPS57155726A publication Critical patent/JPS57155726A/ja
Publication of JPH0343769B2 publication Critical patent/JPH0343769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP56041327A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041327A JPS57155726A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041327A JPS57155726A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57155726A JPS57155726A (en) 1982-09-25
JPH0343769B2 true JPH0343769B2 (enrdf_load_stackoverflow) 1991-07-03

Family

ID=12605418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041327A Granted JPS57155726A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155726A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077752B2 (ja) * 1984-03-07 1995-01-30 株式会社日立製作所 半導体装置の製造方法
JPH07118443B2 (ja) * 1984-05-18 1995-12-18 ソニー株式会社 半導体装置の製法
JPH0722121B2 (ja) * 1984-09-25 1995-03-08 ソニー株式会社 半導体の製造方法
JPS6427231A (en) * 1986-06-30 1989-01-30 Nec Corp Manufacture of semiconductor device
JPH0722140B2 (ja) * 1989-08-10 1995-03-08 三洋電機株式会社 半導体装置の製造方法
JPH03155126A (ja) * 1989-11-13 1991-07-03 Sanyo Electric Co Ltd 半導体装置の製造方法
JP3580564B2 (ja) * 1993-01-27 2004-10-27 田岡化学工業株式会社 コバルト含有アゾ化合物、その用途及び製造方法
JP2744979B2 (ja) * 1994-06-21 1998-04-28 株式会社 半導体エネルギー研究所 半導体の光照射方法
JP2531383B2 (ja) * 1994-07-11 1996-09-04 ソニー株式会社 薄膜トランジスタの製法
JP2500484B2 (ja) * 1994-07-11 1996-05-29 ソニー株式会社 薄膜トランジスタの製法
JP2546538B2 (ja) * 1994-07-11 1996-10-23 ソニー株式会社 薄膜トランジスタの製法
JP2756530B2 (ja) * 1996-09-26 1998-05-25 株式会社半導体エネルギー研究所 光照射方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS57155726A (en) 1982-09-25

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