JPH0450746B2 - - Google Patents

Info

Publication number
JPH0450746B2
JPH0450746B2 JP57033339A JP3333982A JPH0450746B2 JP H0450746 B2 JPH0450746 B2 JP H0450746B2 JP 57033339 A JP57033339 A JP 57033339A JP 3333982 A JP3333982 A JP 3333982A JP H0450746 B2 JPH0450746 B2 JP H0450746B2
Authority
JP
Japan
Prior art keywords
single crystal
forming
crystal semiconductor
recess
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57033339A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58151042A (ja
Inventor
Junji Sakurai
Hajime Kamioka
Seiichiro Kawamura
Motoo Nakano
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3333982A priority Critical patent/JPS58151042A/ja
Publication of JPS58151042A publication Critical patent/JPS58151042A/ja
Publication of JPH0450746B2 publication Critical patent/JPH0450746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
JP3333982A 1982-03-03 1982-03-03 半導体装置の製造方法 Granted JPS58151042A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3333982A JPS58151042A (ja) 1982-03-03 1982-03-03 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3333982A JPS58151042A (ja) 1982-03-03 1982-03-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58151042A JPS58151042A (ja) 1983-09-08
JPH0450746B2 true JPH0450746B2 (enrdf_load_stackoverflow) 1992-08-17

Family

ID=12383803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3333982A Granted JPS58151042A (ja) 1982-03-03 1982-03-03 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58151042A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4387099B2 (ja) * 2001-12-28 2009-12-16 株式会社半導体エネルギー研究所 半導体装置の生産方法
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2004006644A (ja) * 2002-01-28 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4137461B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4137460B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6906343B2 (en) * 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP4503246B2 (ja) * 2002-06-25 2010-07-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device

Also Published As

Publication number Publication date
JPS58151042A (ja) 1983-09-08

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