JPH0376017B2 - - Google Patents

Info

Publication number
JPH0376017B2
JPH0376017B2 JP56111867A JP11186781A JPH0376017B2 JP H0376017 B2 JPH0376017 B2 JP H0376017B2 JP 56111867 A JP56111867 A JP 56111867A JP 11186781 A JP11186781 A JP 11186781A JP H0376017 B2 JPH0376017 B2 JP H0376017B2
Authority
JP
Japan
Prior art keywords
substrate
single crystal
semiconductor region
silicon
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56111867A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5814525A (ja
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11186781A priority Critical patent/JPS5814525A/ja
Publication of JPS5814525A publication Critical patent/JPS5814525A/ja
Publication of JPH0376017B2 publication Critical patent/JPH0376017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11186781A 1981-07-17 1981-07-17 半導体装置の製造方法 Granted JPS5814525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11186781A JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11186781A JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5814525A JPS5814525A (ja) 1983-01-27
JPH0376017B2 true JPH0376017B2 (enrdf_load_stackoverflow) 1991-12-04

Family

ID=14572149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11186781A Granted JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5814525A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12376308B2 (en) 2022-03-23 2025-07-29 Kioxia Corporation Semiconductor memory device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147425A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60210833A (ja) * 1984-04-05 1985-10-23 Agency Of Ind Science & Technol 半導体装置の製造方法
JPH0656014B2 (ja) * 1984-09-22 1994-07-27 輝夫 小井 基礎杭の築造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LETT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12376308B2 (en) 2022-03-23 2025-07-29 Kioxia Corporation Semiconductor memory device

Also Published As

Publication number Publication date
JPS5814525A (ja) 1983-01-27

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