JPS5814525A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5814525A
JPS5814525A JP11186781A JP11186781A JPS5814525A JP S5814525 A JPS5814525 A JP S5814525A JP 11186781 A JP11186781 A JP 11186781A JP 11186781 A JP11186781 A JP 11186781A JP S5814525 A JPS5814525 A JP S5814525A
Authority
JP
Japan
Prior art keywords
substrate
single crystal
region
silicon
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11186781A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376017B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11186781A priority Critical patent/JPS5814525A/ja
Publication of JPS5814525A publication Critical patent/JPS5814525A/ja
Publication of JPH0376017B2 publication Critical patent/JPH0376017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11186781A 1981-07-17 1981-07-17 半導体装置の製造方法 Granted JPS5814525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11186781A JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11186781A JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5814525A true JPS5814525A (ja) 1983-01-27
JPH0376017B2 JPH0376017B2 (enrdf_load_stackoverflow) 1991-12-04

Family

ID=14572149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11186781A Granted JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5814525A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147425A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60210833A (ja) * 1984-04-05 1985-10-23 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6178917A (ja) * 1984-09-22 1986-04-22 Teruo Koi 基礎杭の築造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023140604A (ja) 2022-03-23 2023-10-05 キオクシア株式会社 半導体記憶装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LETT *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147425A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60210833A (ja) * 1984-04-05 1985-10-23 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6178917A (ja) * 1984-09-22 1986-04-22 Teruo Koi 基礎杭の築造方法

Also Published As

Publication number Publication date
JPH0376017B2 (enrdf_load_stackoverflow) 1991-12-04

Similar Documents

Publication Publication Date Title
JPS6281709A (ja) 半導体装置の製造方法
JPS59195871A (ja) Ｍｏｓ電界効果トランジスタの製造方法
JPS58176929A (ja) 半導体装置の製造方法
JPS5891621A (ja) 半導体装置の製造方法
JPS62132311A (ja) 導電体膜の再結晶化方法
JPS5814525A (ja) 半導体装置の製造方法
JPS60150618A (ja) 半導体装置の製造方法
JPS63102265A (ja) 半導体装置の製造方法
JPH0450746B2 (enrdf_load_stackoverflow)
JPS6159820A (ja) 半導体装置の製造方法
JPS5918629A (ja) 半導体装置の製造方法
JPS6017911A (ja) 半導体装置の製造方法
JPS5825220A (ja) 半導体基体の製作方法
JP2745055B2 (ja) 単結晶半導体薄膜の製造方法
JPS61102723A (ja) 半導体装置の製造方法
JPH06163589A (ja) 薄膜トランジスタおよびその製造方法
JPH02863B2 (enrdf_load_stackoverflow)
JP2526380B2 (ja) 多層半導体基板の製造方法
JPS63265464A (ja) 半導体装置の製造方法
JPS61117821A (ja) 半導体装置の製造方法
JPS6017910A (ja) 半導体装置の製造方法
JPS60147111A (ja) 半導体装置の製造方法
JPH07131029A (ja) 薄膜トランジスタの製造方法
JPS58180019A (ja) 半導体基体およびその製造方法
JPS5837918A (ja) 半導体装置の製造方法