JPH0223027B2 - - Google Patents

Info

Publication number
JPH0223027B2
JPH0223027B2 JP56209767A JP20976781A JPH0223027B2 JP H0223027 B2 JPH0223027 B2 JP H0223027B2 JP 56209767 A JP56209767 A JP 56209767A JP 20976781 A JP20976781 A JP 20976781A JP H0223027 B2 JPH0223027 B2 JP H0223027B2
Authority
JP
Japan
Prior art keywords
silicon
recess
film
oxide film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56209767A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58114440A (ja
Inventor
Haruhisa Mori
Hajime Kamioka
Junji Sakurai
Seiichiro Kawamura
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20976781A priority Critical patent/JPS58114440A/ja
Publication of JPS58114440A publication Critical patent/JPS58114440A/ja
Publication of JPH0223027B2 publication Critical patent/JPH0223027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP20976781A 1981-12-28 1981-12-28 半導体装置用基板の製造方法 Granted JPS58114440A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20976781A JPS58114440A (ja) 1981-12-28 1981-12-28 半導体装置用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20976781A JPS58114440A (ja) 1981-12-28 1981-12-28 半導体装置用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS58114440A JPS58114440A (ja) 1983-07-07
JPH0223027B2 true JPH0223027B2 (enrdf_load_stackoverflow) 1990-05-22

Family

ID=16578276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20976781A Granted JPS58114440A (ja) 1981-12-28 1981-12-28 半導体装置用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS58114440A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125169A (ja) * 1984-11-22 1986-06-12 Agency Of Ind Science & Technol 半導体装置の製造方法
JP2007142167A (ja) * 2005-11-18 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device

Also Published As

Publication number Publication date
JPS58114440A (ja) 1983-07-07

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