JPH0338734B2 - - Google Patents

Info

Publication number
JPH0338734B2
JPH0338734B2 JP54146682A JP14668279A JPH0338734B2 JP H0338734 B2 JPH0338734 B2 JP H0338734B2 JP 54146682 A JP54146682 A JP 54146682A JP 14668279 A JP14668279 A JP 14668279A JP H0338734 B2 JPH0338734 B2 JP H0338734B2
Authority
JP
Japan
Prior art keywords
doped region
impurity doped
insulating film
region
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54146682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5670664A (en
Inventor
Keizo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14668279A priority Critical patent/JPS5670664A/ja
Publication of JPS5670664A publication Critical patent/JPS5670664A/ja
Publication of JPH0338734B2 publication Critical patent/JPH0338734B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP14668279A 1979-11-13 1979-11-13 Manufacture of semiconductor device Granted JPS5670664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14668279A JPS5670664A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14668279A JPS5670664A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5670664A JPS5670664A (en) 1981-06-12
JPH0338734B2 true JPH0338734B2 (cg-RX-API-DMAC7.html) 1991-06-11

Family

ID=15413198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14668279A Granted JPS5670664A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5670664A (cg-RX-API-DMAC7.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2813566A1 (de) * 1977-04-01 1978-10-05 Nat Semiconductor Corp Integrierter schaltungsaufbau

Also Published As

Publication number Publication date
JPS5670664A (en) 1981-06-12

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