JPH0337732B2 - - Google Patents
Info
- Publication number
- JPH0337732B2 JPH0337732B2 JP56209548A JP20954881A JPH0337732B2 JP H0337732 B2 JPH0337732 B2 JP H0337732B2 JP 56209548 A JP56209548 A JP 56209548A JP 20954881 A JP20954881 A JP 20954881A JP H0337732 B2 JPH0337732 B2 JP H0337732B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- semiconductor layer
- recess
- insulating film
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20954881A JPS58112333A (ja) | 1981-12-26 | 1981-12-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20954881A JPS58112333A (ja) | 1981-12-26 | 1981-12-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58112333A JPS58112333A (ja) | 1983-07-04 |
| JPH0337732B2 true JPH0337732B2 (enrdf_load_stackoverflow) | 1991-06-06 |
Family
ID=16574629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20954881A Granted JPS58112333A (ja) | 1981-12-26 | 1981-12-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58112333A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4558140B2 (ja) * | 2000-05-02 | 2010-10-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046539B2 (ja) * | 1975-10-15 | 1985-10-16 | 株式会社日立製作所 | シリコン結晶膜の製造方法 |
| JPS5659694A (en) * | 1979-10-18 | 1981-05-23 | Agency Of Ind Science & Technol | Manufacture of thin film |
-
1981
- 1981-12-26 JP JP20954881A patent/JPS58112333A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58112333A (ja) | 1983-07-04 |