JPH0334851B2 - - Google Patents

Info

Publication number
JPH0334851B2
JPH0334851B2 JP59142438A JP14243884A JPH0334851B2 JP H0334851 B2 JPH0334851 B2 JP H0334851B2 JP 59142438 A JP59142438 A JP 59142438A JP 14243884 A JP14243884 A JP 14243884A JP H0334851 B2 JPH0334851 B2 JP H0334851B2
Authority
JP
Japan
Prior art keywords
wiring layer
wiring
insulating film
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59142438A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6123344A (ja
Inventor
Yasuhiro Mochizuki
Kyoshi Tsukuda
Naohiro Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59142438A priority Critical patent/JPS6123344A/ja
Priority to EP85108627A priority patent/EP0171605B1/en
Priority to DE8585108627T priority patent/DE3576056D1/de
Publication of JPS6123344A publication Critical patent/JPS6123344A/ja
Publication of JPH0334851B2 publication Critical patent/JPH0334851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69215—
    • H10P14/6338—
    • H10P14/69433—
    • H10P76/20—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59142438A 1984-07-11 1984-07-11 半導体集積回路の製造方法 Granted JPS6123344A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59142438A JPS6123344A (ja) 1984-07-11 1984-07-11 半導体集積回路の製造方法
EP85108627A EP0171605B1 (en) 1984-07-11 1985-07-11 Method of forming an insulating film on a semiconductor body
DE8585108627T DE3576056D1 (de) 1984-07-11 1985-07-11 Verfahren zum herstellen einer integrierten halbleiterschaltung unter verwendung eines organischen filmes.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59142438A JPS6123344A (ja) 1984-07-11 1984-07-11 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS6123344A JPS6123344A (ja) 1986-01-31
JPH0334851B2 true JPH0334851B2 (en:Method) 1991-05-24

Family

ID=15315315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59142438A Granted JPS6123344A (ja) 1984-07-11 1984-07-11 半導体集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS6123344A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682616B2 (ja) * 1984-10-11 1994-10-19 キヤノン株式会社 堆積膜形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831731B2 (ja) * 1978-11-20 1983-07-08 富士通株式会社 配線形成方法
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法

Also Published As

Publication number Publication date
JPS6123344A (ja) 1986-01-31

Similar Documents

Publication Publication Date Title
WO2020102085A1 (en) Methods for making hard masks useful in next-generation lithography
EP0032024B1 (en) Process for producing semiconductor devices, devices produced by the process, and circuits and articles including such devices
CN102906304A (zh) 利用bdeas沉积的二氧化硅层
JPS5811512B2 (ja) パタ−ン形成方法
US11315787B2 (en) Multiple spacer patterning schemes
US5041362A (en) Dry developable resist etch chemistry
WO2024024925A1 (ja) 基板処理方法及び基板処理システム
JP4058669B2 (ja) シリコン基板上への導電性珪化物層の形成方法および導電性珪化物接点の形成方法
TWI862836B (zh) 包括多個碳層的結構以及形成和使用其的方法
JPH0334851B2 (en:Method)
JPH0691068B2 (ja) 薄膜形成方法
JPS5846635A (ja) 半導体素子パタ−ン形成法
US6337286B1 (en) Method for etching metals using organohalide compounds
EP0171605B1 (en) Method of forming an insulating film on a semiconductor body
JPH0156525B2 (en:Method)
JPS6124252A (ja) 半導体集積回路の製造方法
JP3401322B2 (ja) 絶縁膜を有する半導体装置の製造方法
JPS61164227A (ja) 薄膜形成方法およびその装置
JPS62274082A (ja) ドライエツチング方法
JPS61139026A (ja) 半導体装置の製造方法
JPH0594970A (ja) 薄膜形成方法
KR101390349B1 (ko) 아모포스 카본막, 그 형성 방법 및 이를 이용한 반도체소자의 제조 방법
JPH02181428A (ja) 薄膜形成方法
JPH07176613A (ja) 半導体装置の製造方法
JP2002026020A (ja) 半導体装置の製造方法