JPH0334053B2 - - Google Patents
Info
- Publication number
- JPH0334053B2 JPH0334053B2 JP58053673A JP5367383A JPH0334053B2 JP H0334053 B2 JPH0334053 B2 JP H0334053B2 JP 58053673 A JP58053673 A JP 58053673A JP 5367383 A JP5367383 A JP 5367383A JP H0334053 B2 JPH0334053 B2 JP H0334053B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- lmr
- deep ultraviolet
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- -1 naphthoquinonediazide sulfonic acid ester Chemical class 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229920003986 novolac Polymers 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 5
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229940117955 isoamyl acetate Drugs 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DEDZSLCZHWTGOR-UHFFFAOYSA-N n-propylcyclohexane Natural products CCCC1CCCCC1 DEDZSLCZHWTGOR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58053673A JPS59181535A (ja) | 1983-03-31 | 1983-03-31 | ネガレジストのパタ−ン形成方法 |
| US06/594,481 US4609615A (en) | 1983-03-31 | 1984-03-27 | Process for forming pattern with negative resist using quinone diazide compound |
| EP84302145A EP0124265B1 (fr) | 1983-03-31 | 1984-03-29 | Procédé pour la formation d'images avec des réserves négatives |
| DE8484302145T DE3466741D1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| CA000450963A CA1214679A (fr) | 1983-03-31 | 1984-03-30 | Methode de fabrication de configurations au moyen d'un resist negatif |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58053673A JPS59181535A (ja) | 1983-03-31 | 1983-03-31 | ネガレジストのパタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181535A JPS59181535A (ja) | 1984-10-16 |
| JPH0334053B2 true JPH0334053B2 (fr) | 1991-05-21 |
Family
ID=12949343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58053673A Granted JPS59181535A (ja) | 1983-03-31 | 1983-03-31 | ネガレジストのパタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181535A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045244A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS6045243A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS6230322A (ja) * | 1985-07-31 | 1987-02-09 | Oki Electric Ind Co Ltd | フオトレジストパタ−ンの形成方法 |
| JP5618625B2 (ja) * | 2010-05-25 | 2014-11-05 | 富士フイルム株式会社 | パターン形成方法及び感活性光線性又は感放射線性樹脂組成物 |
| WO2012114963A1 (fr) * | 2011-02-23 | 2012-08-30 | Jsr株式会社 | Procédé de formation de motif négatif et composition de photorésist |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5151939A (ja) * | 1974-10-31 | 1976-05-07 | Canon Kk | Saisenpataanyohotorejisutogenzoeki |
| JPS548304A (en) * | 1977-06-20 | 1979-01-22 | Toyo Tire & Rubber Co Ltd | Radial tire |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
-
1983
- 1983-03-31 JP JP58053673A patent/JPS59181535A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5151939A (ja) * | 1974-10-31 | 1976-05-07 | Canon Kk | Saisenpataanyohotorejisutogenzoeki |
| JPS548304A (en) * | 1977-06-20 | 1979-01-22 | Toyo Tire & Rubber Co Ltd | Radial tire |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59181535A (ja) | 1984-10-16 |
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