JPH0330295B2 - - Google Patents
Info
- Publication number
- JPH0330295B2 JPH0330295B2 JP14804882A JP14804882A JPH0330295B2 JP H0330295 B2 JPH0330295 B2 JP H0330295B2 JP 14804882 A JP14804882 A JP 14804882A JP 14804882 A JP14804882 A JP 14804882A JP H0330295 B2 JPH0330295 B2 JP H0330295B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- etching
- insulating film
- layer
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 23
- 239000002952 polymeric resin Substances 0.000 claims description 20
- 229920003002 synthetic resin Polymers 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 61
- 239000004065 semiconductor Substances 0.000 description 12
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920002160 Celluloid Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14804882A JPS5936944A (ja) | 1982-08-25 | 1982-08-25 | 多層配線形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14804882A JPS5936944A (ja) | 1982-08-25 | 1982-08-25 | 多層配線形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5936944A JPS5936944A (ja) | 1984-02-29 |
| JPH0330295B2 true JPH0330295B2 (enrdf_load_stackoverflow) | 1991-04-26 |
Family
ID=15443972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14804882A Granted JPS5936944A (ja) | 1982-08-25 | 1982-08-25 | 多層配線形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936944A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0824185B2 (ja) * | 1985-03-08 | 1996-03-06 | セイコー電子工業株式会社 | 薄膜トランジスタ装置とその製造方法 |
| US5442237A (en) * | 1991-10-21 | 1995-08-15 | Motorola Inc. | Semiconductor device having a low permittivity dielectric |
-
1982
- 1982-08-25 JP JP14804882A patent/JPS5936944A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5936944A (ja) | 1984-02-29 |
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