JPH0328703B2 - - Google Patents
Info
- Publication number
- JPH0328703B2 JPH0328703B2 JP56158205A JP15820581A JPH0328703B2 JP H0328703 B2 JPH0328703 B2 JP H0328703B2 JP 56158205 A JP56158205 A JP 56158205A JP 15820581 A JP15820581 A JP 15820581A JP H0328703 B2 JPH0328703 B2 JP H0328703B2
- Authority
- JP
- Japan
- Prior art keywords
- ketone
- developer
- methyl isobutyl
- chloroacrylate
- isobutyl ketone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56158205A JPS5860536A (ja) | 1981-10-06 | 1981-10-06 | レジスト像形成方法 |
CA000400774A CA1164261A (en) | 1981-04-21 | 1982-04-08 | PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS |
US06/367,921 US4454222A (en) | 1981-04-21 | 1982-04-13 | Process for forming resist patterns using mixed ketone developers |
EP82103370A EP0064222B1 (en) | 1981-04-21 | 1982-04-21 | Process for forming resist patterns |
DE8282103370T DE3269563D1 (en) | 1981-04-21 | 1982-04-21 | Process for forming resist patterns |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56158205A JPS5860536A (ja) | 1981-10-06 | 1981-10-06 | レジスト像形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5860536A JPS5860536A (ja) | 1983-04-11 |
JPH0328703B2 true JPH0328703B2 (enrdf_load_stackoverflow) | 1991-04-19 |
Family
ID=15666574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56158205A Granted JPS5860536A (ja) | 1981-04-21 | 1981-10-06 | レジスト像形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5860536A (enrdf_load_stackoverflow) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
JPS53100224A (en) * | 1977-02-15 | 1978-09-01 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
-
1981
- 1981-10-06 JP JP56158205A patent/JPS5860536A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5860536A (ja) | 1983-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3987215A (en) | Resist mask formation process | |
EP0064222B1 (en) | Process for forming resist patterns | |
JPH0943848A (ja) | レジスト材料及びレジストパターンの形成方法 | |
US20020123010A1 (en) | Forming a pattern of a negative photoresist | |
JPH02170165A (ja) | 放射線感応性組成物及びそれを用いたパターン形成法 | |
JPH02248952A (ja) | 感光性組成物 | |
EP0030107B1 (en) | Process for forming resist pattern | |
JPH0210824A (ja) | 電子線レジスト現像方法 | |
JPH0328703B2 (enrdf_load_stackoverflow) | ||
JPH0356469B2 (enrdf_load_stackoverflow) | ||
JPS62175739A (ja) | パタ−ン形成方法 | |
JPS5828571B2 (ja) | 微細加工用レジスト形成方法 | |
JPH05341530A (ja) | ブラックマトリックスの形成方法 | |
JPH07196743A (ja) | 放射線感光材料及びパターン形成方法 | |
JPH09134015A (ja) | パタン形成材料,パタン形成方法および半導体素子製造方法 | |
JPH0358103B2 (enrdf_load_stackoverflow) | ||
JPS6358338B2 (enrdf_load_stackoverflow) | ||
JPH0381143B2 (enrdf_load_stackoverflow) | ||
JP2584806B2 (ja) | レジスト材料 | |
JPS63116151A (ja) | パタン形成方法 | |
JPH0358102B2 (enrdf_load_stackoverflow) | ||
JPS6049300B2 (ja) | 耐エツチング性重合体マスクの製造法 | |
JPS58143343A (ja) | 現像溶媒 | |
JPS61245155A (ja) | 感放射線レジスト用現像液 | |
JPH0334054B2 (enrdf_load_stackoverflow) |