JPH0328703B2 - - Google Patents
Info
- Publication number
- JPH0328703B2 JPH0328703B2 JP56158205A JP15820581A JPH0328703B2 JP H0328703 B2 JPH0328703 B2 JP H0328703B2 JP 56158205 A JP56158205 A JP 56158205A JP 15820581 A JP15820581 A JP 15820581A JP H0328703 B2 JPH0328703 B2 JP H0328703B2
- Authority
- JP
- Japan
- Prior art keywords
- ketone
- developer
- methyl isobutyl
- chloroacrylate
- isobutyl ketone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 15
- 229920001577 copolymer Polymers 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 10
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 9
- 150000002576 ketones Chemical class 0.000 claims description 8
- 239000000178 monomer Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 229920001519 homopolymer Polymers 0.000 claims description 2
- SZTBMYHIYNGYIA-UHFFFAOYSA-M 2-chloroacrylate Chemical compound [O-]C(=O)C(Cl)=C SZTBMYHIYNGYIA-UHFFFAOYSA-M 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- -1 fluoroalkyl α-chloroacrylate Chemical compound 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- BOASSOYETJYEJF-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-chloroprop-2-enoate Chemical compound FC(F)(F)COC(=O)C(Cl)=C BOASSOYETJYEJF-UHFFFAOYSA-N 0.000 description 2
- HYTRYEXINDDXJK-UHFFFAOYSA-N Ethyl isopropyl ketone Chemical compound CCC(=O)C(C)C HYTRYEXINDDXJK-UHFFFAOYSA-N 0.000 description 2
- JKQCZAKAXNWFFN-UHFFFAOYSA-N butan-2-one;4-methylpentan-2-one Chemical compound CCC(C)=O.CC(C)CC(C)=O JKQCZAKAXNWFFN-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 2
- XEFLNIYBWZWUAP-UHFFFAOYSA-N 3-methylbutan-2-one 4-methylpentan-2-one Chemical compound CC(C)C(C)=O.CC(C)CC(C)=O XEFLNIYBWZWUAP-UHFFFAOYSA-N 0.000 description 1
- APJPTUTVZLXLDF-UHFFFAOYSA-N 4-methylpentan-2-one;pentan-2-one Chemical compound CCCC(C)=O.CC(C)CC(C)=O APJPTUTVZLXLDF-UHFFFAOYSA-N 0.000 description 1
- QZDWZPHMEUIYAS-UHFFFAOYSA-N 4-methylpentan-2-one;pentan-3-one Chemical compound CCC(=O)CC.CC(C)CC(C)=O QZDWZPHMEUIYAS-UHFFFAOYSA-N 0.000 description 1
- JRAMZZDCVZDTOC-UHFFFAOYSA-N C(C)(CC)C(=O)C.C(C(C)C)C(=O)C Chemical compound C(C)(CC)C(=O)C.C(C(C)C)C(=O)C JRAMZZDCVZDTOC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- KAMPZFQAVZQWPT-UHFFFAOYSA-N butan-2-one;3-methylbutan-2-one Chemical compound CCC(C)=O.CC(C)C(C)=O KAMPZFQAVZQWPT-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- IOFAGYWCVJVXES-UHFFFAOYSA-N hexan-2-one;4-methylpentan-2-one Chemical compound CCCCC(C)=O.CC(C)CC(C)=O IOFAGYWCVJVXES-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Description
本発明は高感度ポジ型放射線レジスト用現像法
の改良に関する。
従来、半導体素子，磁気バブル素子，光部品製
造の際の微細加工技術としては、4000Å以上の波
長をもつ紫外線を用いたフオトリソグラフイーが
採用されているが、近年、半導体素子の高密度
化，高集積化に伴い、電子線，Ｘ線等によるリソ
グラフイー技術が注目され、それに用いる高感度
かつ高解像度の放射線レジストが開発されてい
る。しかしいずれも実用的レベルに於て充分に満
足し得る特性を有しておらず、量産性に関してい
くつかの欠点を内包している。
すなわちフルオロアルキルα−クロルアクリレ
ート系重合体、例えば、ポリトリフルオロエチル
α−クロルアクリレートは高感度なポジ型放射線
レジストを与えることが報告されているが〔T.
Tada，J.Electrochem.Soc.，126 1829（1979）〕、
このレジストは特に低照射領域に於て使用する場
合現像時間が長く、不純物混入に起因する欠陥が
少なく量産性に優れているスプレー現像プロセス
の適用が困難であるという欠陥を有している。
本発明は上記の欠点を解消せんとしてなされた
もので、ポリトリフルオロエチルα−クロルアク
リレート、ないしは、トリフルオロエチルα−ク
ロルアクリレートと他のビニル系モノマーとの共
重合体から成るポジ型放射線レジストに対し、特
定の現像液を用いることによつて、従来よりもは
るかに短時間で、しかも、微細なパターンが形成
出来、従つてスプレー現像処理が可能な、欠陥が
少なく、極めて量産性に富んだレジスト像形成法
を提供せんとするものである。
すなわち本発明は
上式で示されるモノマーの単独重合体、或いは
該モノマー60モル％以上と他のビニル系モノマー
40モル％以下との共重合体のうちの少くとも１種
類以上を基板上に塗布し、所望の部分を放射線で
照射した後、現像液で現像処理を行い基板上にレ
ジスト像を形成させる方法において、前記現像液
として、メチルイソブチルケトンあるいはメチル
イソブチルケトンと他のケトンとの混合液を用い
ることを特徴とするレジスト像形成方法に係るも
のである。
高感度ポジ型放射線レジストポリトリフルオロ
エチルα−クロルアクリレートの従来の現像液で
あるイソプロピルアルコール−メチルイソプロピ
ルケトン混合液ないしはイソプロピルーアルコー
ル−メチルイソブチルケトン混合液を用いた場合
には２〜5μc／cm2の電子線照射量で使用する場
合、10〜20分程度の現像時間が必要であつたが、
本発明によれば１種類のケトンあるいは２種類以
上のケトンから成るケトン系現像液が現像時間の
短縮に有効であり、そのなかでもとりわけメチル
イソブチルケトンあるいはメチルイソブチルケト
ンと他のケトンとの混合液から成る現像液を用い
た場合には１〜４分程度とスプレー現像プロセス
が適用可能な程度にまで現像時間が短縮され、し
かも、鮮明なレジスト像が得られることが確認さ
れた。
ここで本発明に適するポジ型放射線レジストを
例示すれば、ポリトリフルオロエチルα−クロル
アクリレート，トリフルオロエチルα−クロルア
クリレート−メチルメタクリレート共重合体，ト
リフルオロエチルα−クロルアクリレート−メタ
クリル酸共重合体，トリフルオロエチルα−クロ
ルアクリレート−ｔ−ブチルメタクリレート共重
合体，トリフルオロエチルα−クロルアクリレー
ト−トリフルオロイソプロピルーα−クロルアク
リレート共重合体，トリフルオロエチルα−クロ
ルアクリレート−フエニルα−クロルアクリレー
ト共重合体，トリフルオロエチルα−クロルアク
リレート−α−メチルスチレン共重合体，トリフ
ルオロエチルα−クロルアクリレート−ベンジル
α−クロルアクリレート共重合体等を挙げること
が出来る。
共重合体中に占めるトリフルオロエチルα−ク
ロルアクリレートの割合は、本発明の目的を達成
するためには、60モル％以上が必要である。該モ
ノマーの割合が60モル％未満では、満足すべき高
感度のポジ型放射線レジストが得られない。
本発明に係わる現像液系の具体例としては、メ
チルイソブチルケトン，メチルイソブチルケトン
−メチルエチルケトン混合液，メチルイソブチル
ケトン−メチルプロピルケトン混合液，メチルイ
ソブチルケトン−メチルイソプロピルケトン混合
液，メチルイソブチルケトン−ジエチルケトン混
合液，メチルイソブチルケトン−メチルブチルケ
トン混合液，メチルイソブチルケトン−エチルプ
ロピルケトン混合液，メチルイソブチルケトン−
エチルイソプロピルケトン混合液，メチルイソブ
チルケトン−メチルsec−ブチルケトン混合液等
を挙げることができる。
上記混合液中に占めるメチルイソブチルケトン
の割合は、本発明の目的を達成するためには、通
常20重量％以上であり、好ましくは、50重量％以
上である。
以下実施例により、本発明を更に詳しく説明す
る。
実施例 １
ポリトリフルオロエチルα−クロルアクリレー
ト（分子量80万）をスピンコーテイングによつて
Crマスク基板上0.5μの厚さに塗布した後、200℃
１時間、空気中でプリベーク処理を施した。次い
で、プリベークされたレジスト膜の所望部分に加
速電圧20KVの電子線を4.0μc／cm2の照射密度で照
射した後、本発明の現像液であるメチルイソブチ
ルケトン−メチルエチルケトン系混合液を用いた
スプレー現像によつて、また同時に比較例として
従来の現像液を用いた静置現像によつて現像処理
を行い、それぞれの現像時間を表−１に示した。
TECHNICAL FIELD This invention relates to an improved development method for high-sensitivity positive-working radiation resists. Traditionally, photolithography using ultraviolet light with a wavelength of 4000 Å or more has been used as a microfabrication technology for manufacturing semiconductor devices, magnetic bubble devices, and optical components. With the increase in integration, lithography techniques using electron beams, X-rays, etc. are attracting attention, and high-sensitivity and high-resolution radiation resists for use therein are being developed. However, none of them have characteristics that are fully satisfactory on a practical level, and have several drawbacks in terms of mass productivity. That is, it has been reported that fluoroalkyl α-chloroacrylate polymers, such as polytrifluoroethyl α-chloroacrylate, provide highly sensitive positive radiation resists [T.
Tada, J.Electrochem.Soc., 126 1829 (1979)],
This resist has the disadvantage that it takes a long time to develop, especially when used in a low irradiation area, and it is difficult to apply a spray development process, which has few defects due to impurity contamination and is excellent in mass production. The present invention has been made to solve the above-mentioned drawbacks, and is a positive radiation resist made of polytrifluoroethyl α-chloroacrylate or a copolymer of trifluoroethyl α-chloroacrylate and other vinyl monomers. On the other hand, by using a specific developer, it is possible to form fine patterns in a much shorter time than before, and therefore spray development is possible, there are fewer defects, and it is extremely easy to mass-produce. The present invention aims to provide a resist image forming method. That is, the present invention A homopolymer of the monomer represented by the above formula, or 60 mol% or more of the monomer and other vinyl monomers
A method of coating at least one type of copolymer with 40 mol% or less on a substrate, irradiating the desired area with radiation, and then developing with a developer to form a resist image on the substrate. The present invention relates to a resist image forming method characterized in that methyl isobutyl ketone or a mixture of methyl isobutyl ketone and another ketone is used as the developer. High-sensitivity positive radiation resist When using a conventional developer of polytrifluoroethyl α-chloroacrylate, which is an isopropyl alcohol-methyl isopropyl ketone mixture solution or an isopropyl alcohol-methyl isobutyl ketone mixture solution, it is 2 to 5 μc/cm. When used with the electron beam irradiation amount of 2 , it required a developing time of about 10 to 20 minutes.
According to the present invention, a ketone-based developer consisting of one type of ketone or two or more types of ketones is effective in shortening the development time, and in particular, a solution of methyl isobutyl ketone or a mixture of methyl isobutyl ketone and other ketones. It was confirmed that when a developer consisting of the following was used, the development time was shortened to about 1 to 4 minutes, to the extent that a spray development process could be applied, and a clear resist image could be obtained. Examples of positive radiation resists suitable for the present invention include polytrifluoroethyl α-chloroacrylate, trifluoroethyl α-chloroacrylate-methyl methacrylate copolymer, and trifluoroethyl α-chloroacrylate-methacrylic acid copolymer. copolymer, trifluoroethyl α-chloroacrylate-t-butyl methacrylate copolymer, trifluoroethyl α-chloroacrylate-trifluoroisopropyl-α-chloroacrylate copolymer, trifluoroethyl α-chloroacrylate-phenyl α-chlor Examples include acrylate copolymer, trifluoroethyl α-chloroacrylate-α-methylstyrene copolymer, trifluoroethyl α-chloroacrylate-benzyl α-chloroacrylate copolymer, and the like. The proportion of trifluoroethyl α-chloroacrylate in the copolymer needs to be 60 mol% or more in order to achieve the object of the present invention. If the proportion of the monomer is less than 60 mol%, a positive radiation resist with satisfactory high sensitivity cannot be obtained. Specific examples of the developer system according to the present invention include methyl isobutyl ketone, methyl isobutyl ketone-methyl ethyl ketone mixture, methyl isobutyl ketone-methyl propyl ketone mixture, methyl isobutyl ketone-methyl isopropyl ketone mixture, methyl isobutyl ketone-diethyl Ketone mixture, methyl isobutyl ketone-methyl butyl ketone mixture, methyl isobutyl ketone-ethyl propyl ketone mixture, methyl isobutyl ketone
Examples include ethyl isopropyl ketone mixture, methyl isobutyl ketone-methyl sec-butyl ketone mixture, and the like. In order to achieve the object of the present invention, the proportion of methyl isobutyl ketone in the above liquid mixture is usually 20% by weight or more, preferably 50% by weight or more. The present invention will be explained in more detail with reference to Examples below. Example 1 Polytrifluoroethyl α-chloroacrylate (molecular weight 800,000) was coated by spin coating.
After coating to a thickness of 0.5μ on a Cr mask substrate, 200℃
Prebaking treatment was performed in air for 1 hour. Next, a desired portion of the prebaked resist film is irradiated with an electron beam at an acceleration voltage of 20 KV at an irradiation density of 4.0 μc/cm 2 , and then sprayed using a methyl isobutyl ketone-methyl ethyl ketone mixture, which is the developer of the present invention. Development processing was carried out by development, and at the same time, as a comparative example, by stationary development using a conventional developer, and the respective development times are shown in Table 1.
【表】
表−１から明らかな如く、本発明による現像液
を用いることによつて従来の現像液の場合に較べ
て1/5〜1/20に現像時間が短縮され、またスプレ
ー現像プロセスのため、はるかに欠陥の少い鮮明
なレジストパターンが得られていることが確認さ
れた。また同時に上記現像液を用いた場合には例
えばメチルエチルケトン−メチルイソプロピルケ
トンの様な他のケトン系現像液を用いた場合に較
べてよい高解像度のパターンが得られることも確
認された。
実施例 ２
レジストとしてトリフルオロエチルα−クロル
アクリレート−メチルメタクリレート共重合体
（共重合比97：３、分子量90万）を用いた以外に
は前記実施例１と同様な方法によりCrマスク基
板上にレジスタパターンを形成し電子線で所望の
部分を照射した後、本発明の現像液であるメチル
イソブチルケトン−メチルエチルケトン混合液を
用いたスプレー現像によつて、また同時に比較例
として従来の現像液を用いた静置現像によつて現
像処理を行いそれぞれの現像時間を表−２に示し
た。[Table] As is clear from Table 1, by using the developer according to the present invention, the development time is shortened by 1/5 to 1/20 compared to the case of the conventional developer, and the spray development process is Therefore, it was confirmed that a clear resist pattern with far fewer defects was obtained. At the same time, it was also confirmed that when the above developer was used, a pattern with better resolution could be obtained than when other ketone developers such as methyl ethyl ketone-methyl isopropyl ketone were used. Example 2 A sample was prepared on a Cr mask substrate in the same manner as in Example 1 except that trifluoroethyl α-chloroacrylate-methyl methacrylate copolymer (copolymerization ratio 97:3, molecular weight 900,000) was used as the resist. After forming a register pattern and irradiating a desired area with an electron beam, spray development was performed using a mixed solution of methyl isobutyl ketone and methyl ethyl ketone, which is the developer of the present invention, and at the same time, a conventional developer was used as a comparative example. Development processing was carried out by static development, and the respective development times are shown in Table 2.
【表】
表−２から明らかな如く、本発明による現像液
を用いることによつて従来の場合と較べて1/4〜
１／２０に現像時間が短縮され、従来の場合に較べて
はるかに欠陥の少ないレジストパターンが得られ
ることが確認された。
以上詳述した如く、本発明による現像液を用い
ることによつて現像時間の大幅な短縮ができ、し
かも他のケトン系現像液に較べてより解像性の高
いパターンが得られるため、スプレー現像プロセ
スが適用可能であり、従つて従来よりもはるかに
短時間で欠陥の少い鮮明なレジストパターンの形
成が可能となり、もつて半導体基板，マスク基板
などの微細加工に有効に利用出来る量産性の優れ
たレジスト像を形成することができる。[Table] As is clear from Table 2, by using the developer according to the present invention, compared to the conventional case,
It was confirmed that the development time was shortened to 1/20 and a resist pattern with far fewer defects than in the conventional case was obtained. As detailed above, by using the developer according to the present invention, the development time can be significantly shortened, and patterns with higher resolution can be obtained compared to other ketone-based developers. The process is applicable, and therefore, it is possible to form clear resist patterns with fewer defects in a much shorter time than conventional methods, making it possible to form mass-produced resist patterns that can be effectively used for microfabrication of semiconductor substrates, mask substrates, etc. Excellent resist images can be formed.
Claims (1)
該モノマー60モル％以上と他のビニル系モノマー
40モル％以下との共重合体のうちの少くとも１種
類以上を基板上に塗布し、所望の部分を放射線で
照射した後、現像液で現像処理を行い基板上にレ
ジスト像を形成させる方法において、前記現像液
として、メチルイソブチルケトン単独あるいはメ
チルイソブチルケトンと他のケトンとの混合液を
用いることを特徴とするレジスト像形成方法。[Claims] 1 A homopolymer of the monomer represented by the above formula, or 60 mol% or more of the monomer and other vinyl monomers
A method of coating at least one type of copolymer with 40 mol% or less on a substrate, irradiating the desired area with radiation, and then developing with a developer to form a resist image on the substrate. A resist image forming method, characterized in that methyl isobutyl ketone alone or a mixture of methyl isobutyl ketone and another ketone is used as the developer.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56158205A JPS5860536A (en) | 1981-10-06 | 1981-10-06 | Method for forming resist image |
| CA000400774A CA1164261A (en) | 1981-04-21 | 1982-04-08 | PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS |
| US06/367,921 US4454222A (en) | 1981-04-21 | 1982-04-13 | Process for forming resist patterns using mixed ketone developers |
| EP82103370A EP0064222B1 (en) | 1981-04-21 | 1982-04-21 | Process for forming resist patterns |
| DE8282103370T DE3269563D1 (en) | 1981-04-21 | 1982-04-21 | Process for forming resist patterns |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56158205A JPS5860536A (en) | 1981-10-06 | 1981-10-06 | Method for forming resist image |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860536A JPS5860536A (en) | 1983-04-11 |
| JPH0328703B2 true JPH0328703B2 (en) | 1991-04-19 |
Family
ID=15666574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56158205A Granted JPS5860536A (en) | 1981-04-21 | 1981-10-06 | Method for forming resist image |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860536A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
| JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
| JPS53100224A (en) * | 1977-02-15 | 1978-09-01 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
-
1981
- 1981-10-06 JP JP56158205A patent/JPS5860536A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
| JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
| JPS53100224A (en) * | 1977-02-15 | 1978-09-01 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860536A (en) | 1983-04-11 |
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