JPH0356469B2 - - Google Patents
Info
- Publication number
- JPH0356469B2 JPH0356469B2 JP20847182A JP20847182A JPH0356469B2 JP H0356469 B2 JPH0356469 B2 JP H0356469B2 JP 20847182 A JP20847182 A JP 20847182A JP 20847182 A JP20847182 A JP 20847182A JP H0356469 B2 JPH0356469 B2 JP H0356469B2
- Authority
- JP
- Japan
- Prior art keywords
- rinsing
- ipa
- resist
- chloroacrylate
- copolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 27
- 229920001577 copolymer Polymers 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 229920001519 homopolymer Polymers 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 9
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims 3
- SZTBMYHIYNGYIA-UHFFFAOYSA-M 2-chloroacrylate Chemical compound [O-]C(=O)C(Cl)=C SZTBMYHIYNGYIA-UHFFFAOYSA-M 0.000 description 4
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- -1 fluoroalkyl α-chloroacrylate Chemical compound 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BOASSOYETJYEJF-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-chloroprop-2-enoate Chemical compound FC(F)(F)COC(=O)C(Cl)=C BOASSOYETJYEJF-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- SZTBMYHIYNGYIA-UHFFFAOYSA-N 2-chloroacrylic acid Chemical compound OC(=O)C(Cl)=C SZTBMYHIYNGYIA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20847182A JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20847182A JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5999720A JPS5999720A (ja) | 1984-06-08 |
| JPH0356469B2 true JPH0356469B2 (enrdf_load_stackoverflow) | 1991-08-28 |
Family
ID=16556720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20847182A Granted JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5999720A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0424182B1 (en) * | 1989-10-19 | 1998-07-08 | Fujitsu Limited | Process for formation of resist patterns |
| JP2007191399A (ja) * | 2006-01-17 | 2007-08-02 | Arakawa Chem Ind Co Ltd | 脂環式化合物およびその製造方法 |
| CN107735730B (zh) * | 2015-06-23 | 2021-03-19 | 富士胶片株式会社 | 显影液、图案形成方法及电子设备的制造方法 |
-
1982
- 1982-11-30 JP JP20847182A patent/JPS5999720A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5999720A (ja) | 1984-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3987215A (en) | Resist mask formation process | |
| EP0064222B1 (en) | Process for forming resist patterns | |
| EP0231028A2 (en) | High contrast low metal ion photoresist developing method and composition | |
| JPH0356469B2 (enrdf_load_stackoverflow) | ||
| JPH0210824A (ja) | 電子線レジスト現像方法 | |
| JPH02248952A (ja) | 感光性組成物 | |
| JP3779882B2 (ja) | 現像方法、パターン形成方法およびこれらを用いたフォトマスクの製造方法、半導体装置の製造方法 | |
| JP3118887B2 (ja) | パターン形成方法 | |
| JP2001318472A5 (enrdf_load_stackoverflow) | ||
| JPS62175739A (ja) | パタ−ン形成方法 | |
| JP2867509B2 (ja) | レジストパターンの形成方法 | |
| JPH06110214A (ja) | レジストパターンの形成方法 | |
| JPH0328703B2 (enrdf_load_stackoverflow) | ||
| JPH09134015A (ja) | パタン形成材料，パタン形成方法および半導体素子製造方法 | |
| JPH0693122B2 (ja) | 高感度感応性放射線レジスト | |
| JPH087441B2 (ja) | ポジ型高感度放射線感応性レジスト | |
| JPH0381143B2 (enrdf_load_stackoverflow) | ||
| JP2550655B2 (ja) | ポジ型電子線レジスト | |
| JP2871010B2 (ja) | ポジ型電子線レジスト液 | |
| JP2856593B2 (ja) | レジストパターンの形成方法 | |
| JPH0452648A (ja) | レジストパターン形成方法 | |
| JPS608842A (ja) | パタ−ン形成法 | |
| JPH0358102B2 (enrdf_load_stackoverflow) | ||
| JP2525891B2 (ja) | ポジ型電子線レジストの現像方法 | |
| JPH0334054B2 (enrdf_load_stackoverflow) |