JPH0358103B2 - - Google Patents

Info

Publication number
JPH0358103B2
JPH0358103B2 JP56212729A JP21272981A JPH0358103B2 JP H0358103 B2 JPH0358103 B2 JP H0358103B2 JP 56212729 A JP56212729 A JP 56212729A JP 21272981 A JP21272981 A JP 21272981A JP H0358103 B2 JPH0358103 B2 JP H0358103B2
Authority
JP
Japan
Prior art keywords
group
general formula
copolymer
carbon atoms
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56212729A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58113932A (ja
Inventor
Tsuneo Fujii
Hiroshi Inukai
Takayuki Deguchi
Toshihiko Amano
Masami Kakuchi
Hiroshi Asakawa
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Daikin Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Daikin Kogyo Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56212729A priority Critical patent/JPS58113932A/ja
Priority to EP82111725A priority patent/EP0090089B1/en
Priority to DE8282111725T priority patent/DE3279090D1/de
Priority to CA000418004A priority patent/CA1207099A/en
Priority to US06/450,726 priority patent/US4539250A/en
Publication of JPS58113932A publication Critical patent/JPS58113932A/ja
Priority to US06/710,190 priority patent/US4686168A/en
Publication of JPH0358103B2 publication Critical patent/JPH0358103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP56212729A 1981-12-19 1981-12-26 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法 Granted JPS58113932A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56212729A JPS58113932A (ja) 1981-12-26 1981-12-26 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
EP82111725A EP0090089B1 (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
DE8282111725T DE3279090D1 (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
CA000418004A CA1207099A (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
US06/450,726 US4539250A (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
US06/710,190 US4686168A (en) 1981-12-19 1985-03-11 Fluoroalkyl acrylate resist material and process for forming fine resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56212729A JPS58113932A (ja) 1981-12-26 1981-12-26 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS58113932A JPS58113932A (ja) 1983-07-07
JPH0358103B2 true JPH0358103B2 (enrdf_load_stackoverflow) 1991-09-04

Family

ID=16627462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56212729A Granted JPS58113932A (ja) 1981-12-19 1981-12-26 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS58113932A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63218713A (ja) * 1987-02-17 1988-09-12 Daikin Ind Ltd α−フルオロアクリル酸系重合体ならびに用途
US5011275A (en) * 1988-07-05 1991-04-30 Ciba-Geigy Corporation Dimethylacrylamide-copolymer hydrogels with high oxygen permeability
JPH02111988A (ja) * 1988-10-21 1990-04-24 Toppan Printing Co Ltd ホログラム複製型およびその製造方法並びにホログラムの製造方法
CA2562593A1 (en) * 2004-04-15 2005-10-27 Daikin Industries, Ltd. Fluorine-containing polymer and treating agent composition
JP7643204B2 (ja) * 2021-06-23 2025-03-11 日本ゼオン株式会社 レジストパターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558243A (en) * 1978-10-24 1980-04-30 Nippon Telegr & Teleph Corp <Ntt> Highly sensitive positive resist composition
JPS605320B2 (ja) * 1979-03-02 1985-02-09 有限会社大和製作所 折畳みふとん干し具
JPS5653114A (en) * 1979-10-08 1981-05-12 Kohjin Co Ltd Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays

Also Published As

Publication number Publication date
JPS58113932A (ja) 1983-07-07

Similar Documents

Publication Publication Date Title
US4686168A (en) Fluoroalkyl acrylate resist material and process for forming fine resist pattern
JP4421710B2 (ja) 新規なポリマー及びそれらを含有してなるフォトレジスト組成物
KR20060050399A (ko) 액침 노광용 보호막 형성 조성물 및 이를 이용한패턴형성방법
US4345020A (en) Positive resist polymer composition and method of forming resist pattern
WO2019150966A1 (ja) レジスト組成物およびレジスト膜
EP0064222A2 (en) Process for forming resist patterns
JP3221909B2 (ja) フォトレジスト材料およびそれを用いるパターン形成方法
JPH0358103B2 (enrdf_load_stackoverflow)
JPH0358104B2 (enrdf_load_stackoverflow)
US4476217A (en) Sensitive positive electron beam resists
US4279984A (en) Positive resist for high energy radiation
KR100198408B1 (ko) 레지스트 물질 및 그의 사용방법
EP0006939B1 (en) Positive type resist polymer composition and method of making resist patterns
EP0119017B1 (en) Electron-beam and x-ray sensitive polymers and resists
JPH0358102B2 (enrdf_load_stackoverflow)
JP2988268B2 (ja) 感放射線樹脂組成物
US4414313A (en) Sensitive positive electron beam resists
EP0064864B1 (en) Method of making sensitive positive electron beam resists
US4415653A (en) Method of making sensitive positive electron beam resists
JPH087443B2 (ja) 高解像度ポジ型放射線感応性レジスト
US4276365A (en) Positive resist terpolymer composition and method of forming resist pattern
US4656119A (en) Method of manufacturing X-ray resist
JPS6411936B2 (enrdf_load_stackoverflow)
JPH087441B2 (ja) ポジ型高感度放射線感応性レジスト
KR20030089171A (ko) 유기 난반사 방지막 형성용 광흡수성 고분자, 이를포함하는 조성물, 및 이를 이용한 반도체 소자 패턴의형성 방법