JPH0358102B2 - - Google Patents

Info

Publication number
JPH0358102B2
JPH0358102B2 JP56205877A JP20587781A JPH0358102B2 JP H0358102 B2 JPH0358102 B2 JP H0358102B2 JP 56205877 A JP56205877 A JP 56205877A JP 20587781 A JP20587781 A JP 20587781A JP H0358102 B2 JPH0358102 B2 JP H0358102B2
Authority
JP
Japan
Prior art keywords
copolymer
general formula
resist
mixture
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56205877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58106536A (ja
Inventor
Tsuneo Fujii
Hiroshi Inukai
Takayuki Deguchi
Toshihiko Amano
Masami Kakuchi
Hiroshi Asakawa
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Daikin Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Daikin Kogyo Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56205877A priority Critical patent/JPS58106536A/ja
Priority to EP82111725A priority patent/EP0090089B1/en
Priority to DE8282111725T priority patent/DE3279090D1/de
Priority to CA000418004A priority patent/CA1207099A/en
Priority to US06/450,726 priority patent/US4539250A/en
Publication of JPS58106536A publication Critical patent/JPS58106536A/ja
Priority to US06/710,190 priority patent/US4686168A/en
Publication of JPH0358102B2 publication Critical patent/JPH0358102B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP56205877A 1981-12-19 1981-12-19 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法 Granted JPS58106536A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56205877A JPS58106536A (ja) 1981-12-19 1981-12-19 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
EP82111725A EP0090089B1 (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
DE8282111725T DE3279090D1 (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
CA000418004A CA1207099A (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
US06/450,726 US4539250A (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern
US06/710,190 US4686168A (en) 1981-12-19 1985-03-11 Fluoroalkyl acrylate resist material and process for forming fine resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205877A JPS58106536A (ja) 1981-12-19 1981-12-19 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS58106536A JPS58106536A (ja) 1983-06-24
JPH0358102B2 true JPH0358102B2 (enrdf_load_stackoverflow) 1991-09-04

Family

ID=16514204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205877A Granted JPS58106536A (ja) 1981-12-19 1981-12-19 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS58106536A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05114673A (ja) * 1991-10-23 1993-05-07 Nikko Kyodo Co Ltd Ｔａｂ用テ−プキヤリア製造裏止め剤
WO2017057253A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 処理液及びパターン形成方法
CN108139691A (zh) * 2015-09-30 2018-06-08 富士胶片株式会社 处理液及图案形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558243A (en) * 1978-10-24 1980-04-30 Nippon Telegr & Teleph Corp <Ntt> Highly sensitive positive resist composition
JPS5619044A (en) * 1979-06-29 1981-02-23 Nec Corp Positive type resist
JPS57173833A (en) * 1981-04-21 1982-10-26 Toshiba Corp Formation of radiation resist image
JPS5821739A (ja) * 1981-07-31 1983-02-08 Toshiba Corp フオトマスクの製造方法
JPS5859442A (ja) * 1981-10-06 1983-04-08 Toshiba Corp ポジ型放射線感応レジスト材料

Also Published As

Publication number Publication date
JPS58106536A (ja) 1983-06-24

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