JPH0328062B2 - - Google Patents
Info
- Publication number
- JPH0328062B2 JPH0328062B2 JP60176752A JP17675285A JPH0328062B2 JP H0328062 B2 JPH0328062 B2 JP H0328062B2 JP 60176752 A JP60176752 A JP 60176752A JP 17675285 A JP17675285 A JP 17675285A JP H0328062 B2 JPH0328062 B2 JP H0328062B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- drain
- field effect
- gate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- 230000010287 polarization Effects 0.000 description 12
- 108091006146 Channels Proteins 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176752A JPS6236874A (ja) | 1985-08-09 | 1985-08-09 | 半導体装置 |
| KR1019850007310A KR900000584B1 (ko) | 1984-07-11 | 1985-10-04 | 반도체 집적회로 장치 |
| EP85307129A EP0178133B1 (fr) | 1984-10-08 | 1985-10-04 | Dispositif semi-conducteur à circuit intégré |
| DE8585307129T DE3581159D1 (de) | 1984-10-08 | 1985-10-04 | Halbleiteranordnung mit integrierter schaltung. |
| US07/158,043 US4791471A (en) | 1984-10-08 | 1988-02-16 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176752A JPS6236874A (ja) | 1985-08-09 | 1985-08-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6236874A JPS6236874A (ja) | 1987-02-17 |
| JPH0328062B2 true JPH0328062B2 (fr) | 1991-04-17 |
Family
ID=16019185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60176752A Granted JPS6236874A (ja) | 1984-07-11 | 1985-08-09 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236874A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135082A (en) * | 1980-03-26 | 1981-10-22 | Toshiba Corp | Thermal head for recording two-dimensional pattern |
| JPH01273359A (ja) * | 1988-04-26 | 1989-11-01 | Nec Corp | 半導体集積回路 |
| JP3119198B2 (ja) * | 1997-05-28 | 2000-12-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP5237232B2 (ja) * | 2009-09-25 | 2013-07-17 | 独立行政法人科学技術振興機構 | 電子スピン共鳴生成装置および電子スピン共鳴の生成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979577A (ja) * | 1982-10-29 | 1984-05-08 | Fujitsu Ltd | 半導体集積回路装置 |
| JPS60177679A (ja) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | 半導体装置 |
-
1985
- 1985-08-09 JP JP60176752A patent/JPS6236874A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979577A (ja) * | 1982-10-29 | 1984-05-08 | Fujitsu Ltd | 半導体集積回路装置 |
| JPS60177679A (ja) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236874A (ja) | 1987-02-17 |
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