JPH0322694B2 - - Google Patents

Info

Publication number
JPH0322694B2
JPH0322694B2 JP59164603A JP16460384A JPH0322694B2 JP H0322694 B2 JPH0322694 B2 JP H0322694B2 JP 59164603 A JP59164603 A JP 59164603A JP 16460384 A JP16460384 A JP 16460384A JP H0322694 B2 JPH0322694 B2 JP H0322694B2
Authority
JP
Japan
Prior art keywords
base region
oxide film
conductor layer
region
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59164603A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6063962A (ja
Inventor
Shinichi Inoe
Nobuo Toyokura
Hajime Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59164603A priority Critical patent/JPS6063962A/ja
Publication of JPS6063962A publication Critical patent/JPS6063962A/ja
Publication of JPH0322694B2 publication Critical patent/JPH0322694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP59164603A 1984-08-06 1984-08-06 バイポ−ラトランジスタの製造方法 Granted JPS6063962A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59164603A JPS6063962A (ja) 1984-08-06 1984-08-06 バイポ−ラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59164603A JPS6063962A (ja) 1984-08-06 1984-08-06 バイポ−ラトランジスタの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55155376A Division JPS6044823B2 (ja) 1980-11-05 1980-11-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6063962A JPS6063962A (ja) 1985-04-12
JPH0322694B2 true JPH0322694B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-27

Family

ID=15796314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59164603A Granted JPS6063962A (ja) 1984-08-06 1984-08-06 バイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6063962A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150748A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置の配線形成方法
JPH0693458B2 (ja) * 1986-01-27 1994-11-16 富士通株式会社 バイポ−ラトランジスタ
EP0265489B1 (en) * 1986-04-23 1991-01-16 AT&T Corp. Process for manufacturing semiconductor devices
JPH04219928A (ja) * 1990-12-20 1992-08-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US6633069B2 (en) * 1997-05-20 2003-10-14 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2709477B2 (ja) * 1988-07-21 1998-02-04 キヤノン株式会社 シリアル記録装置

Also Published As

Publication number Publication date
JPS6063962A (ja) 1985-04-12

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