JPH0147012B2 - - Google Patents

Info

Publication number
JPH0147012B2
JPH0147012B2 JP54137749A JP13774979A JPH0147012B2 JP H0147012 B2 JPH0147012 B2 JP H0147012B2 JP 54137749 A JP54137749 A JP 54137749A JP 13774979 A JP13774979 A JP 13774979A JP H0147012 B2 JPH0147012 B2 JP H0147012B2
Authority
JP
Japan
Prior art keywords
film
silicon
melting point
point metal
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54137749A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5662339A (en
Inventor
Tooru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP13774979A priority Critical patent/JPS5662339A/ja
Publication of JPS5662339A publication Critical patent/JPS5662339A/ja
Publication of JPH0147012B2 publication Critical patent/JPH0147012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP13774979A 1979-10-26 1979-10-26 Production of semiconductor device Granted JPS5662339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13774979A JPS5662339A (en) 1979-10-26 1979-10-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13774979A JPS5662339A (en) 1979-10-26 1979-10-26 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5662339A JPS5662339A (en) 1981-05-28
JPH0147012B2 true JPH0147012B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-10-12

Family

ID=15205925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13774979A Granted JPS5662339A (en) 1979-10-26 1979-10-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5662339A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617071A (en) * 1981-10-27 1986-10-14 Fairchild Semiconductor Corporation Method of fabricating electrically connected regions of opposite conductivity type in a semiconductor structure
JPS59220919A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置の製造方法
JPS6057974A (ja) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS63207179A (ja) * 1987-02-24 1988-08-26 Seikosha Co Ltd 半導体装置の製造方法
JPH0226021A (ja) * 1988-07-14 1990-01-29 Matsushita Electron Corp 多層配線の形成方法
JPH02292866A (ja) * 1989-05-02 1990-12-04 Nec Corp Ｍｉｓ型半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2229611C3 (de) * 1972-06-19 1980-07-17 Boehringer Mannheim Gmbh, 6800 Mannheim Diagnostischer Nachweis von Urobilinogen-Körpern
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate

Also Published As

Publication number Publication date
JPS5662339A (en) 1981-05-28

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