JPH0313676B2 - - Google Patents
Info
- Publication number
- JPH0313676B2 JPH0313676B2 JP25104684A JP25104684A JPH0313676B2 JP H0313676 B2 JPH0313676 B2 JP H0313676B2 JP 25104684 A JP25104684 A JP 25104684A JP 25104684 A JP25104684 A JP 25104684A JP H0313676 B2 JPH0313676 B2 JP H0313676B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mos
- line
- mos transistor
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 3
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Read Only Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251046A JPS61129800A (ja) | 1984-11-28 | 1984-11-28 | Ｒｏｍ装置 |
| US06/798,681 US4709352A (en) | 1984-11-19 | 1985-11-15 | MOS read-only memory systems |
| KR1019850008614A KR900008185B1 (ko) | 1984-11-09 | 1985-11-18 | 판독전용 반도체 기억장치 |
| EP85308426A EP0183476B1 (en) | 1984-11-19 | 1985-11-19 | Mos read-only memory systems |
| DE8585308426T DE3584612D1 (de) | 1984-11-19 | 1985-11-19 | Mos-festwertspeicher. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251046A JPS61129800A (ja) | 1984-11-28 | 1984-11-28 | Ｒｏｍ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61129800A JPS61129800A (ja) | 1986-06-17 |
| JPH0313676B2 true JPH0313676B2 (enrdf_load_stackoverflow) | 1991-02-25 |
Family
ID=17216806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59251046A Granted JPS61129800A (ja) | 1984-11-09 | 1984-11-28 | Ｒｏｍ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61129800A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617189B2 (ja) * | 1987-08-03 | 1997-06-04 | 沖電気工業株式会社 | 電流検出回路 |
| JP5331031B2 (ja) | 2010-02-25 | 2013-10-30 | ラピスセミコンダクタ株式会社 | 電流検出回路 |
-
1984
- 1984-11-28 JP JP59251046A patent/JPS61129800A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61129800A (ja) | 1986-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4760561A (en) | MOS static type RAM having a variable load | |
| KR100247575B1 (ko) | 반도체 기억 장치 | |
| JPH06162776A (ja) | 半導体メモリ回路 | |
| JPWO2002082460A1 (ja) | 半導体不揮発性記憶装置 | |
| US5677889A (en) | Static type semiconductor device operable at a low voltage with small power consumption | |
| JPH0350359B2 (enrdf_load_stackoverflow) | ||
| KR900008185B1 (ko) | 판독전용 반도체 기억장치 | |
| JPH0371495A (ja) | 紫外線消去型不揮発性メモリ装置 | |
| JPH02285598A (ja) | 半導体記憶装置 | |
| KR930008413B1 (ko) | 반도체기억장치 | |
| JPH0313676B2 (enrdf_load_stackoverflow) | ||
| JP3047659B2 (ja) | 半導体集積回路 | |
| JPS6027118B2 (ja) | 半導体メモリ装置 | |
| JPH05120881A (ja) | 半導体記憶装置 | |
| JP3119740B2 (ja) | 半導体メモリの内部電源切換え回路 | |
| JP3545444B2 (ja) | 読み出し専用記憶装置 | |
| JPS5938674B2 (ja) | 記憶装置 | |
| JPS63313397A (ja) | 記憶装置のセンスアンプ回路装置 | |
| JPH01140499A (ja) | 半導体メモリのセンス増幅回路 | |
| JPH01150296A (ja) | 信号検出回路 | |
| JPH11203882A (ja) | 半導体記憶装置 | |
| JPH0313675B2 (enrdf_load_stackoverflow) | ||
| JPH0682808B2 (ja) | Ｍｏｓ型半導体集積回路装置 | |
| JP3158281B2 (ja) | メモリ装置 | |
| JPH08315592A (ja) | 読出し専用メモリ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |