DE3584612D1 - Mos-festwertspeicher. - Google Patents

Mos-festwertspeicher.

Info

Publication number
DE3584612D1
DE3584612D1 DE8585308426T DE3584612T DE3584612D1 DE 3584612 D1 DE3584612 D1 DE 3584612D1 DE 8585308426 T DE8585308426 T DE 8585308426T DE 3584612 T DE3584612 T DE 3584612T DE 3584612 D1 DE3584612 D1 DE 3584612D1
Authority
DE
Germany
Prior art keywords
fixed value
value storage
mos
mos fixed
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585308426T
Other languages
English (en)
Inventor
Shooji Kitazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59245586A external-priority patent/JPS61123000A/ja
Priority claimed from JP59251046A external-priority patent/JPS61129800A/ja
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE3584612D1 publication Critical patent/DE3584612D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
DE8585308426T 1984-11-19 1985-11-19 Mos-festwertspeicher. Expired - Lifetime DE3584612D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59245586A JPS61123000A (ja) 1984-11-19 1984-11-19 読出し専用半導体記憶装置
JP59251046A JPS61129800A (ja) 1984-11-28 1984-11-28 Ｒｏｍ装置

Publications (1)

Publication Number Publication Date
DE3584612D1 true DE3584612D1 (de) 1991-12-12

Family

ID=26537294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585308426T Expired - Lifetime DE3584612D1 (de) 1984-11-19 1985-11-19 Mos-festwertspeicher.

Country Status (4)

Country Link
US (1) US4709352A (de)
EP (1) EP0183476B1 (de)
KR (1) KR900008185B1 (de)
DE (1) DE3584612D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175704A (en) * 1987-07-29 1992-12-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2617189B2 (ja) * 1987-08-03 1997-06-04 沖電気工業株式会社 電流検出回路
JP2513795B2 (ja) * 1988-07-22 1996-07-03 沖電気工業株式会社 Ｍｏｓ型半導体記憶装置
US5204838A (en) * 1988-10-28 1993-04-20 Fuji Xerox Co., Ltd. High speed readout circuit
US5469195A (en) * 1991-01-24 1995-11-21 Texas Instruments Incorporated Integrated circuit capacitors, buffers, systems and methods
JP2723695B2 (ja) * 1991-07-02 1998-03-09 シャープ株式会社 半導体記憶装置
US5422845A (en) * 1993-09-30 1995-06-06 Intel Corporation Method and device for improved programming threshold voltage distribution in electrically programmable read only memory array
US6169686B1 (en) * 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
JP2005142289A (ja) * 2003-11-05 2005-06-02 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS6014438B2 (ja) * 1979-08-29 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
JPS5837636B2 (ja) * 1980-07-31 1983-08-17 富士通株式会社 半導体記憶装置
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
JPS5940397A (ja) * 1982-08-31 1984-03-06 Toshiba Corp デ−タ読み出し回路

Also Published As

Publication number Publication date
KR860004414A (ko) 1986-06-23
EP0183476B1 (de) 1991-11-06
EP0183476A3 (en) 1989-04-05
KR900008185B1 (ko) 1990-11-05
EP0183476A2 (de) 1986-06-04
US4709352A (en) 1987-11-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition