JPH0262859B2 - - Google Patents

Info

Publication number
JPH0262859B2
JPH0262859B2 JP56214813A JP21481381A JPH0262859B2 JP H0262859 B2 JPH0262859 B2 JP H0262859B2 JP 56214813 A JP56214813 A JP 56214813A JP 21481381 A JP21481381 A JP 21481381A JP H0262859 B2 JPH0262859 B2 JP H0262859B2
Authority
JP
Japan
Prior art keywords
group
crosslinking
polymer
containing polymer
crosslinking group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56214813A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58116532A (ja
Inventor
Kazuo Toda
Katsuhiro Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56214813A priority Critical patent/JPS58116532A/ja
Publication of JPS58116532A publication Critical patent/JPS58116532A/ja
Publication of JPH0262859B2 publication Critical patent/JPH0262859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP56214813A 1981-12-29 1981-12-29 パタ−ン形成方法 Granted JPS58116532A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56214813A JPS58116532A (ja) 1981-12-29 1981-12-29 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56214813A JPS58116532A (ja) 1981-12-29 1981-12-29 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58116532A JPS58116532A (ja) 1983-07-11
JPH0262859B2 true JPH0262859B2 (en, 2012) 1990-12-26

Family

ID=16661941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56214813A Granted JPS58116532A (ja) 1981-12-29 1981-12-29 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58116532A (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026337A (ja) * 1983-07-22 1985-02-09 Fujitsu Ltd パタ−ン形成方法
JPS6029745A (ja) * 1983-07-28 1985-02-15 Fujitsu Ltd パタ−ン形成方法
JPS6070442A (ja) * 1983-09-28 1985-04-22 Fujitsu Ltd パタ−ン形成方法
JPS6073536A (ja) * 1983-09-30 1985-04-25 Fujitsu Ltd パタ−ン形成方法
JPS60117244A (ja) * 1983-11-30 1985-06-24 Fujitsu Ltd パタ−ン形成方法
JPS63291053A (ja) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物
JPS63291052A (ja) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133042A (en) * 1979-04-04 1980-10-16 Fujitsu Ltd Pattern forming method
JPS5664337A (en) * 1979-10-29 1981-06-01 Matsushita Electric Ind Co Ltd Radiation resist material and radiation resist pattern forming method
JPS56128941A (en) * 1980-03-14 1981-10-08 Mitsubishi Rayon Co Ltd Resin composition for positive type resist
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.

Also Published As

Publication number Publication date
JPS58116532A (ja) 1983-07-11

Similar Documents

Publication Publication Date Title
EP0256031B1 (en) Method for developing poly(methacrylic anhydride) resists
US4289845A (en) Fabrication based on radiation sensitive resists and related products
US6319655B1 (en) Modification of 193 nm sensitive photoresist materials by electron beam exposure
US6713236B2 (en) Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer
JPS61144639A (ja) 放射線感応性組成物及びそれを用いたパタ−ン形成法
US5688634A (en) Energy sensitive resist material and process for device fabrication using the resist material
JP2883798B2 (ja) 半導体素子のパターン化方法
JPH0262859B2 (en, 2012)
US6150070A (en) Method of creating optimal profile in single layer photoresist
JPS61218133A (ja) 半導体デバイスのパタ−ン形成方法
JPS6248211B2 (en, 2012)
JPS6376438A (ja) パタ−ン形成方法
JP2867509B2 (ja) レジストパターンの形成方法
US6045978A (en) Chemically treated photoresist for withstanding ion bombarded processing
JPS6358338B2 (en, 2012)
JPS62212646A (ja) 感光性組成物
JPH08202050A (ja) パターン形成方法
JPH06148899A (ja) レジストパターン形成方法
JPS61260242A (ja) レジストパタ−ンの形成方法
JPS62138843A (ja) 複合レジスト構造体
JPS60102735A (ja) 電子線レジストの処理方法
JPH0381143B2 (en, 2012)
JPS58122531A (ja) パタ−ン形成方法
JPH05216233A (ja) 化学増幅系レジストとレジストパターンの形成方法
JPH033210B2 (en, 2012)