JPH0261133B2 - - Google Patents

Info

Publication number
JPH0261133B2
JPH0261133B2 JP56165810A JP16581081A JPH0261133B2 JP H0261133 B2 JPH0261133 B2 JP H0261133B2 JP 56165810 A JP56165810 A JP 56165810A JP 16581081 A JP16581081 A JP 16581081A JP H0261133 B2 JPH0261133 B2 JP H0261133B2
Authority
JP
Japan
Prior art keywords
mark
electron beam
detectors
data
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56165810A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5867027A (ja
Inventor
Hisatake Yokochi
Masahide Okumura
Genya Matsuoka
Tsutomu Komoda
Susumu Ozasa
Korehito Matsuda
Tsuneo Ookubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP16581081A priority Critical patent/JPS5867027A/ja
Publication of JPS5867027A publication Critical patent/JPS5867027A/ja
Publication of JPH0261133B2 publication Critical patent/JPH0261133B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Electron Beam Exposure (AREA)
JP16581081A 1981-10-19 1981-10-19 電子ビ−ム露光装置におけるマ−ク位置検出方法 Granted JPS5867027A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16581081A JPS5867027A (ja) 1981-10-19 1981-10-19 電子ビ−ム露光装置におけるマ−ク位置検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16581081A JPS5867027A (ja) 1981-10-19 1981-10-19 電子ビ−ム露光装置におけるマ−ク位置検出方法

Publications (2)

Publication Number Publication Date
JPS5867027A JPS5867027A (ja) 1983-04-21
JPH0261133B2 true JPH0261133B2 (fr) 1990-12-19

Family

ID=15819419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16581081A Granted JPS5867027A (ja) 1981-10-19 1981-10-19 電子ビ−ム露光装置におけるマ−ク位置検出方法

Country Status (1)

Country Link
JP (1) JPS5867027A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0495627U (fr) * 1991-01-11 1992-08-19

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643885B2 (ja) * 1984-05-25 1994-06-08 株式会社日立製作所 荷電粒子マイクロプロ−ブ装置
JP3453009B2 (ja) * 1995-07-20 2003-10-06 富士通株式会社 電子ビーム露光装置及びこの装置に於けるマーク位置検出方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534430A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Positioning method in electron beam exposure
JPS56162837A (en) * 1980-05-20 1981-12-15 Nec Corp Electron beam exposure device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534430A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Positioning method in electron beam exposure
JPS56162837A (en) * 1980-05-20 1981-12-15 Nec Corp Electron beam exposure device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0495627U (fr) * 1991-01-11 1992-08-19

Also Published As

Publication number Publication date
JPS5867027A (ja) 1983-04-21

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