JPS56162837A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS56162837A
JPS56162837A JP6663880A JP6663880A JPS56162837A JP S56162837 A JPS56162837 A JP S56162837A JP 6663880 A JP6663880 A JP 6663880A JP 6663880 A JP6663880 A JP 6663880A JP S56162837 A JPS56162837 A JP S56162837A
Authority
JP
Japan
Prior art keywords
electron beam
pair
output signals
signal
difference signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6663880A
Other languages
Japanese (ja)
Inventor
Katsumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6663880A priority Critical patent/JPS56162837A/en
Publication of JPS56162837A publication Critical patent/JPS56162837A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To ensure the detection of a mask position by providing two signal processing systems which employ preferable one of sum or difference signal of a pair of output signals from a pair of electron beam detectors which scan an electron beam sensitive resist on a semiconductor wafer. CONSTITUTION:An electron beam sensitive resist 3 is coated on a groove-shaped superposed mask 2 formed on an Si wafer 1, is scanned with an electron beam 4, and reflected electrons are detected by a a pair of electron beam detectors to obtain output signals. The sum signal of a pair of output signals 21 is designated by 23 and the difference signal is designated by 22 when the thickness of the resist film is 4,500Angstrom . In this case, the difference signal is employed to identify that there is a mark in the valley part. When the thickness of the film is 1.3mum, the sum signal 13 of a pair of output signals 11, 21 is empolyed. Thus, it can detect an accurate mark position.
JP6663880A 1980-05-20 1980-05-20 Electron beam exposure device Pending JPS56162837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6663880A JPS56162837A (en) 1980-05-20 1980-05-20 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6663880A JPS56162837A (en) 1980-05-20 1980-05-20 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS56162837A true JPS56162837A (en) 1981-12-15

Family

ID=13321634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6663880A Pending JPS56162837A (en) 1980-05-20 1980-05-20 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS56162837A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867027A (en) * 1981-10-19 1983-04-21 Hitachi Ltd Mark position detecting method for electronic beam exposing device
JPS58184726A (en) * 1982-04-22 1983-10-28 Sanyo Electric Co Ltd Positioning method for electron beam lithography
JPH03229409A (en) * 1990-02-05 1991-10-11 Matsushita Electron Corp Pattern detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319764A (en) * 1976-08-09 1978-02-23 Nippon Telegr & Teleph Corp <Ntt> Mark detection system in electron beam exposure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319764A (en) * 1976-08-09 1978-02-23 Nippon Telegr & Teleph Corp <Ntt> Mark detection system in electron beam exposure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867027A (en) * 1981-10-19 1983-04-21 Hitachi Ltd Mark position detecting method for electronic beam exposing device
JPH0261133B2 (en) * 1981-10-19 1990-12-19 Hitachi Seisakusho Kk
JPS58184726A (en) * 1982-04-22 1983-10-28 Sanyo Electric Co Ltd Positioning method for electron beam lithography
JPH0584050B2 (en) * 1982-04-22 1993-11-30 Sanyo Electric Co
JPH03229409A (en) * 1990-02-05 1991-10-11 Matsushita Electron Corp Pattern detector

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