JPH0257339B2 - - Google Patents

Info

Publication number
JPH0257339B2
JPH0257339B2 JP63117153A JP11715388A JPH0257339B2 JP H0257339 B2 JPH0257339 B2 JP H0257339B2 JP 63117153 A JP63117153 A JP 63117153A JP 11715388 A JP11715388 A JP 11715388A JP H0257339 B2 JPH0257339 B2 JP H0257339B2
Authority
JP
Japan
Prior art keywords
layer
etching
titanium
buffer
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63117153A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63305518A (ja
Inventor
Yuuresu Fuan Ukeru Yakuesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS63305518A publication Critical patent/JPS63305518A/ja
Publication of JPH0257339B2 publication Critical patent/JPH0257339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H10P50/667—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP63117153A 1987-05-18 1988-05-16 半導体デバイスの製造方法 Granted JPS63305518A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8701184 1987-05-18
NL8701184A NL8701184A (nl) 1987-05-18 1987-05-18 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS63305518A JPS63305518A (ja) 1988-12-13
JPH0257339B2 true JPH0257339B2 (cg-RX-API-DMAC10.html) 1990-12-04

Family

ID=19850032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63117153A Granted JPS63305518A (ja) 1987-05-18 1988-05-16 半導体デバイスの製造方法

Country Status (6)

Country Link
US (1) US4814293A (cg-RX-API-DMAC10.html)
EP (1) EP0292057B1 (cg-RX-API-DMAC10.html)
JP (1) JPS63305518A (cg-RX-API-DMAC10.html)
KR (1) KR970009862B1 (cg-RX-API-DMAC10.html)
DE (1) DE3874411T2 (cg-RX-API-DMAC10.html)
NL (1) NL8701184A (cg-RX-API-DMAC10.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
EP0517288B1 (en) * 1991-04-29 1996-04-10 Koninklijke Philips Electronics N.V. Diffusion barrier enhancement in metallization structure for semiconductor device fabrication
US5246732A (en) * 1991-07-16 1993-09-21 U.S. Philips Corporation Method of providing a copper pattern on a dielectric substrate
JP3135185B2 (ja) * 1993-03-19 2001-02-13 三菱電機株式会社 半導体エッチング液，半導体エッチング方法，及びＧａＡｓ面の判定方法
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors
US5374328A (en) * 1993-03-25 1994-12-20 Watkins Johnson Company Method of fabricating group III-V compound
US5462638A (en) 1994-06-15 1995-10-31 International Business Machines Corporation Selective etching of TiW for C4 fabrication
JPH08162425A (ja) * 1994-12-06 1996-06-21 Mitsubishi Electric Corp 半導体集積回路装置の製造方法および製造装置
US5800726A (en) * 1995-07-26 1998-09-01 International Business Machines Corporation Selective chemical etching in microelectronics fabrication
US5759437A (en) * 1996-10-31 1998-06-02 International Business Machines Corporation Etching of Ti-W for C4 rework
JPH1187262A (ja) * 1997-09-03 1999-03-30 Toshiba Corp 半導体装置及びその製造方法
US6015505A (en) * 1997-10-30 2000-01-18 International Business Machines Corporation Process improvements for titanium-tungsten etching in the presence of electroplated C4's
US6436300B2 (en) 1998-07-30 2002-08-20 Motorola, Inc. Method of manufacturing electronic components
US6332988B1 (en) 1999-06-02 2001-12-25 International Business Machines Corporation Rework process
KR100379824B1 (ko) 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
US7521366B2 (en) * 2001-12-12 2009-04-21 Lg Display Co., Ltd. Manufacturing method of electro line for liquid crystal display device
DE10230252B4 (de) 2002-07-04 2013-10-17 Robert Bosch Gmbh Verfahren zur Herstellung integrierter Mikrosysteme
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
WO2006068091A1 (ja) * 2004-12-20 2006-06-29 Stella Chemifa Corporation 微細加工処理剤、及びそれを用いた微細加工処理方法
US7425278B2 (en) * 2006-11-28 2008-09-16 International Business Machines Corporation Process of etching a titanium/tungsten surface and etchant used therein
US8025812B2 (en) * 2007-04-27 2011-09-27 International Business Machines Corporation Selective etch of TiW for capture pad formation
JP2009076601A (ja) * 2007-09-19 2009-04-09 Nagase Chemtex Corp エッチング溶液
KR101282177B1 (ko) * 2008-09-09 2013-07-04 쇼와 덴코 가부시키가이샤 티탄계 금속, 텅스텐계 금속, 티탄-텅스텐계 금속 또는 그것들의 질화물의 에칭액
JP5169959B2 (ja) * 2009-04-08 2013-03-27 信越半導体株式会社 発光素子の製造方法
WO2015054460A1 (en) * 2013-10-11 2015-04-16 E. I. Du Pont De Nemours And Company Removal composition for selectively removing hard mask
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841931A (en) * 1973-07-23 1974-10-15 Bell Telephone Labor Inc Mild acid etch for tungsten
SU707949A1 (ru) * 1976-12-14 1980-01-05 Институт химии Уральского научного центра АН СССР Раствор дл травлени вольфрама с поверхности алюмини
US4443295A (en) * 1983-06-13 1984-04-17 Fairchild Camera & Instrument Corp. Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2

Also Published As

Publication number Publication date
US4814293A (en) 1989-03-21
NL8701184A (nl) 1988-12-16
DE3874411D1 (de) 1992-10-15
JPS63305518A (ja) 1988-12-13
KR880014662A (ko) 1988-12-24
DE3874411T2 (de) 1993-04-08
KR970009862B1 (ko) 1997-06-18
EP0292057A1 (en) 1988-11-23
EP0292057B1 (en) 1992-09-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees