JPH0256810B2 - - Google Patents

Info

Publication number
JPH0256810B2
JPH0256810B2 JP59182113A JP18211384A JPH0256810B2 JP H0256810 B2 JPH0256810 B2 JP H0256810B2 JP 59182113 A JP59182113 A JP 59182113A JP 18211384 A JP18211384 A JP 18211384A JP H0256810 B2 JPH0256810 B2 JP H0256810B2
Authority
JP
Japan
Prior art keywords
inp
ingaasp
etching
diffraction grating
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59182113A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159839A (ja
Inventor
Masayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59182113A priority Critical patent/JPS6159839A/ja
Publication of JPS6159839A publication Critical patent/JPS6159839A/ja
Publication of JPH0256810B2 publication Critical patent/JPH0256810B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/646—

Landscapes

  • Weting (AREA)
JP59182113A 1984-08-31 1984-08-31 エツチング液 Granted JPS6159839A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59182113A JPS6159839A (ja) 1984-08-31 1984-08-31 エツチング液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59182113A JPS6159839A (ja) 1984-08-31 1984-08-31 エツチング液

Publications (2)

Publication Number Publication Date
JPS6159839A JPS6159839A (ja) 1986-03-27
JPH0256810B2 true JPH0256810B2 (enExample) 1990-12-03

Family

ID=16112557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59182113A Granted JPS6159839A (ja) 1984-08-31 1984-08-31 エツチング液

Country Status (1)

Country Link
JP (1) JPS6159839A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296719A (en) * 1991-07-22 1994-03-22 Matsushita Electric Industrial Co., Ltd. Quantum device and fabrication method thereof

Also Published As

Publication number Publication date
JPS6159839A (ja) 1986-03-27

Similar Documents

Publication Publication Date Title
US5436195A (en) Method of fabricating an integrated semiconductor light modulator and laser
JPH02205092A (ja) 半導体ダイオードレーザおよびその製造方法
JP2687526B2 (ja) 分布帰還型半導体レーザ及びその製造方法
JP3173582B2 (ja) 分布帰還型半導体レーザ
JP3971484B2 (ja) 半導体レーザ装置
JPH0256810B2 (enExample)
JPH0231488A (ja) 半導体レーザ装置及びその製造方法
EP0356135B1 (en) A semiconductor laser device
JPH02260636A (ja) 半導体レーザの製造方法
JP2957198B2 (ja) 半導体レーザ装置
JPS59127892A (ja) 半導体レ−ザとその製造方法
JPS60126880A (ja) 半導体レ−ザ装置
JPH06209143A (ja) 回折格子の製造方法
JPH05136521A (ja) 半導体レーザ
JPH01218088A (ja) 分布帰還型半導体レーザ装置
JPH10270789A (ja) 光通信等に用いる半導体光素子及びその製造方法
KR100372768B1 (ko) 레이저 다이오드 제조방법
JP3274710B2 (ja) 分布帰還型半導体レーザ素子および分布帰還型半導体レーザ素子の製造方法
KR100243737B1 (ko) 화합물 반도체 및 그 제조방법
JPS6292490A (ja) 分布帰還型半導体レ−ザ
JPH01248586A (ja) 光半導体装置の製造方法
JPH0233972A (ja) 半導体量子細線構造
JPS61182295A (ja) 半導体レ−ザ装置
JPS6175585A (ja) 埋め込み形半導体レ−ザ
JPS61134096A (ja) 分布帰還型半導体レ−ザ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term