JPH0253941B2 - - Google Patents

Info

Publication number
JPH0253941B2
JPH0253941B2 JP55147303A JP14730380A JPH0253941B2 JP H0253941 B2 JPH0253941 B2 JP H0253941B2 JP 55147303 A JP55147303 A JP 55147303A JP 14730380 A JP14730380 A JP 14730380A JP H0253941 B2 JPH0253941 B2 JP H0253941B2
Authority
JP
Japan
Prior art keywords
semiconductor
amorphous
gas
electric field
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55147303A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5771126A (en
Inventor
Shunpei Yamazaki
Jujiro Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP55147303A priority Critical patent/JPS5771126A/ja
Publication of JPS5771126A publication Critical patent/JPS5771126A/ja
Publication of JPH0253941B2 publication Critical patent/JPH0253941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H10P14/22—
    • H10P14/2905—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55147303A 1980-10-21 1980-10-21 Semiamorhous semiconductor Granted JPS5771126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147303A JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147303A JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Publications (2)

Publication Number Publication Date
JPS5771126A JPS5771126A (en) 1982-05-01
JPH0253941B2 true JPH0253941B2 (en:Method) 1990-11-20

Family

ID=15427141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147303A Granted JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Country Status (1)

Country Link
JP (1) JPS5771126A (en:Method)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054997A (ja) * 2007-07-27 2009-03-12 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8008169B2 (en) 2007-12-28 2011-08-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8178398B2 (en) 2007-07-27 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of display device
US8198629B2 (en) 2008-04-25 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US9018109B2 (en) 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
US9766526B2 (en) 2007-07-06 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8403005A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Werkwijze voor het vervaardigen van een bipolaire heterojunctietransistor en bipolaire heterojunctie-transistor vervaardigd volgens de werkwijze.
WO2009128553A1 (en) 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
KR101703511B1 (ko) 2008-06-27 2017-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5498762B2 (ja) 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
WO2010103906A1 (en) 2009-03-09 2010-09-16 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5888802B2 (ja) 2009-05-28 2016-03-22 株式会社半導体エネルギー研究所 トランジスタを有する装置
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1980 *
J.NON-CRYST.SOLIED=1979 *
JAPAN.J.APPL.PHYS=1980 *

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10712625B2 (en) 2007-07-06 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US12066730B2 (en) 2007-07-06 2024-08-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US10678107B2 (en) 2007-07-06 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US10338447B2 (en) 2007-07-06 2019-07-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US11726378B2 (en) 2007-07-06 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US11194207B2 (en) 2007-07-06 2021-12-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9766526B2 (en) 2007-07-06 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7736933B2 (en) 2007-07-27 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing photoelectric conversion device
JP2009054997A (ja) * 2007-07-27 2009-03-12 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US8178398B2 (en) 2007-07-27 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of display device
US8008169B2 (en) 2007-12-28 2011-08-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8198629B2 (en) 2008-04-25 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US9018109B2 (en) 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5771126A (en) 1982-05-01

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