JPS5771126A - Semiamorhous semiconductor - Google Patents

Semiamorhous semiconductor

Info

Publication number
JPS5771126A
JPS5771126A JP55147303A JP14730380A JPS5771126A JP S5771126 A JPS5771126 A JP S5771126A JP 55147303 A JP55147303 A JP 55147303A JP 14730380 A JP14730380 A JP 14730380A JP S5771126 A JPS5771126 A JP S5771126A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor
silicon
mass
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147303A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0253941B2 (en:Method
Inventor
Shunpei Yamazaki
Yujiro Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP55147303A priority Critical patent/JPS5771126A/ja
Publication of JPS5771126A publication Critical patent/JPS5771126A/ja
Publication of JPH0253941B2 publication Critical patent/JPH0253941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H10P14/22—
    • H10P14/2905—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55147303A 1980-10-21 1980-10-21 Semiamorhous semiconductor Granted JPS5771126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147303A JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147303A JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Publications (2)

Publication Number Publication Date
JPS5771126A true JPS5771126A (en) 1982-05-01
JPH0253941B2 JPH0253941B2 (en:Method) 1990-11-20

Family

ID=15427141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147303A Granted JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Country Status (1)

Country Link
JP (1) JPS5771126A (en:Method)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180480A (ja) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ バイポ−ラ・ヘテロ接合トランジスタ−及びその製造方法
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8138032B2 (en) 2008-04-18 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
JP5216446B2 (ja) 2007-07-27 2013-06-19 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び表示装置の作製方法
JP5058084B2 (ja) * 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US7888167B2 (en) 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US9018109B2 (en) 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1980 *
J.NON-CRYST.SOLIED=1979 *
JAPAN.J.APPL.PHYS=1980 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180480A (ja) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ バイポ−ラ・ヘテロ接合トランジスタ−及びその製造方法
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8138032B2 (en) 2008-04-18 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8604481B2 (en) 2009-03-09 2013-12-10 Semiconductor Energy Co., Ltd. Thin film transistor
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor

Also Published As

Publication number Publication date
JPH0253941B2 (en:Method) 1990-11-20

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