JPH02502136A - 電圧源 - Google Patents
電圧源Info
- Publication number
- JPH02502136A JPH02502136A JP63508408A JP50840888A JPH02502136A JP H02502136 A JPH02502136 A JP H02502136A JP 63508408 A JP63508408 A JP 63508408A JP 50840888 A JP50840888 A JP 50840888A JP H02502136 A JPH02502136 A JP H02502136A
- Authority
- JP
- Japan
- Prior art keywords
- current
- transistor
- voltage
- source circuit
- voltage source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (9)
- 1.電圧源回路であって: 入力および出力を有し、第1基準電位線に接続された電流ミラー; 該電流ミラーの入力に接続された基準電流源;ならびに前記電流ミラーの出力に 接続された第1電流電極、第2基準電位線に接続された第2電流電極、および基 準電流に依存する電圧を第1電流電極において発生するように接続された制御電 極を有するバイアス・トランジスタ;によって構成され、前記電流ミラーの出力 が当該電圧源回路の出力を形成することを特徴とする電圧源回路。
- 2.前記基準電流源は、前記電流ミラーの入力に接続された第1電流電極、前記 第2基準電位線に接続された第2電流電極および入力基準電圧を入力するための 制御電極を有するトランジスタによって構成される;ことを特徴とする請求の範 囲第1項記載の電圧源回路。
- 3.前記入力基準電圧は、前記基準電流源を形成するトランジスタのしきい値電 圧のほほ2倍の値を有する;ことを特徴とする請求の範囲第2項記載の電圧源回 路。
- 4.前記バイアス・トランジスタの制御電極は、前記入力基準電圧を入力するよ うに接続される;ことを特徴とする請求の範囲第2項または第3項のいすれかに 記載の電圧源回路。
- 5.前記バイアス・トランジスタの制御電極は、前記電圧ミラーの出力に接続さ れる; ことを特徴とする請求の範囲第2項または第3項のいすれかに記載の電圧源回路 。
- 6.前記入力基準電圧は、第2ダイオード結合トランジスタと前記第1基準電位 線との間に接続された第1ダイオード結合トランジスタのゲート電極で発生する ;ことを特徴とする請求の範囲第3項に記載の電圧源回路。
- 7.電圧源回路の出力にむける電圧を修正するため、電流ミラーの入力および出 力における電流を調整する手段;によってさらに構成されることを特徴とする請 求の範囲第6項記載の電圧源回路。
- 8.前記調整手段は第1調整トランジスタと第2調整トランジスタとから構成さ れ、第1調整トランジスタは前記電流ミラーの出力と第2調整トランジスタの第 1電流電極との間に直列に接続され、第2調整トランジスタは調整電流を電流ミ ラーの出力で発生する電流から減じるよう、前記第2基準電位線に接続された第 2電流電極と前記入力基準電圧を入力するように接続されたゲート電極とを有し 、第1調整トランジスタのゲート電極は前記第2ダイオード接合トランジスタの ゲート電極に接続される;ことを特徴とする請求の範囲第7項記載の電圧源回路 。
- 9.前記調整手段は、電流ミラーの入力と第2基準電位線との間に接続された第 3調整トランジスタによってさらに構成され、調整電流を基準電流源によって発 生された電流に加えるため、前記第3調整トランジスタのゲート電極が前記第2 ダイオード接合トランジスタに接続される;ことを特徴とする請求の範囲第8項 記載の電圧源回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8800703 | 1988-01-13 | ||
GB8800703A GB2214333B (en) | 1988-01-13 | 1988-01-13 | Voltage sources |
PCT/EP1988/000940 WO1989006837A1 (en) | 1988-01-13 | 1988-10-20 | Voltage sources |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02502136A true JPH02502136A (ja) | 1990-07-12 |
JPH0774977B2 JPH0774977B2 (ja) | 1995-08-09 |
Family
ID=10629879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63508408A Expired - Lifetime JPH0774977B2 (ja) | 1988-01-13 | 1988-10-20 | 電圧源 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5027054A (ja) |
EP (1) | EP0354932B1 (ja) |
JP (1) | JPH0774977B2 (ja) |
DE (1) | DE3886744T2 (ja) |
GB (1) | GB2214333B (ja) |
WO (1) | WO1989006837A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950010284B1 (ko) * | 1992-03-18 | 1995-09-12 | 삼성전자주식회사 | 기준전압 발생회로 |
US5349286A (en) * | 1993-06-18 | 1994-09-20 | Texas Instruments Incorporated | Compensation for low gain bipolar transistors in voltage and current reference circuits |
US5793247A (en) * | 1994-12-16 | 1998-08-11 | Sgs-Thomson Microelectronics, Inc. | Constant current source with reduced sensitivity to supply voltage and process variation |
US5581209A (en) * | 1994-12-20 | 1996-12-03 | Sgs-Thomson Microelectronics, Inc. | Adjustable current source |
US5596297A (en) * | 1994-12-20 | 1997-01-21 | Sgs-Thomson Microelectronics, Inc. | Output driver circuitry with limited output high voltage |
US5598122A (en) * | 1994-12-20 | 1997-01-28 | Sgs-Thomson Microelectronics, Inc. | Voltage reference circuit having a threshold voltage shift |
US6132625A (en) | 1998-05-28 | 2000-10-17 | E. I. Du Pont De Nemours And Company | Method for treatment of aqueous streams comprising biosolids |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3823332A (en) * | 1970-01-30 | 1974-07-09 | Rca Corp | Mos fet reference voltage supply |
FR2454651A1 (fr) * | 1979-04-20 | 1980-11-14 | Radiotechnique Compelec | Generateur de tension constante pour circuits integres |
GB2090442B (en) * | 1980-12-10 | 1984-09-05 | Suwa Seikosha Kk | A low voltage regulation circuit |
EP0084021A1 (en) * | 1981-05-18 | 1983-07-27 | Mostek Corporation | Reference voltage circuit |
JPS6091425A (ja) * | 1983-10-25 | 1985-05-22 | Sharp Corp | 定電圧電源回路 |
JPS60243715A (ja) * | 1984-10-24 | 1985-12-03 | Hitachi Ltd | 電子装置 |
JPH0690656B2 (ja) * | 1985-01-24 | 1994-11-14 | ソニー株式会社 | 基準電圧の形成回路 |
US4588941A (en) * | 1985-02-11 | 1986-05-13 | At&T Bell Laboratories | Cascode CMOS bandgap reference |
JPS6269719A (ja) * | 1985-09-24 | 1987-03-31 | Toshiba Corp | レベル変換論理回路 |
US4751463A (en) * | 1987-06-01 | 1988-06-14 | Sprague Electric Company | Integrated voltage regulator circuit with transient voltage protection |
-
1988
- 1988-01-13 GB GB8800703A patent/GB2214333B/en not_active Expired - Lifetime
- 1988-10-20 JP JP63508408A patent/JPH0774977B2/ja not_active Expired - Lifetime
- 1988-10-20 WO PCT/EP1988/000940 patent/WO1989006837A1/en active IP Right Grant
- 1988-10-20 DE DE88909205T patent/DE3886744T2/de not_active Expired - Fee Related
- 1988-10-20 EP EP88909205A patent/EP0354932B1/en not_active Expired - Lifetime
- 1988-10-20 US US07/415,210 patent/US5027054A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB2214333A (en) | 1989-08-31 |
EP0354932A1 (en) | 1990-02-21 |
DE3886744D1 (de) | 1994-02-10 |
GB2214333B (en) | 1992-01-29 |
DE3886744T2 (de) | 1994-04-28 |
JPH0774977B2 (ja) | 1995-08-09 |
WO1989006837A1 (en) | 1989-07-27 |
GB8800703D0 (en) | 1988-02-10 |
EP0354932B1 (en) | 1993-12-29 |
US5027054A (en) | 1991-06-25 |
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