JPH0246666B2 - - Google Patents

Info

Publication number
JPH0246666B2
JPH0246666B2 JP62304029A JP30402987A JPH0246666B2 JP H0246666 B2 JPH0246666 B2 JP H0246666B2 JP 62304029 A JP62304029 A JP 62304029A JP 30402987 A JP30402987 A JP 30402987A JP H0246666 B2 JPH0246666 B2 JP H0246666B2
Authority
JP
Japan
Prior art keywords
substrate
vacuum
evaporation
thin film
evaporation sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62304029A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01147056A (ja
Inventor
Hiroshi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eikoo Enjiniaringu Kk
Original Assignee
Eikoo Enjiniaringu Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eikoo Enjiniaringu Kk filed Critical Eikoo Enjiniaringu Kk
Priority to JP30402987A priority Critical patent/JPH01147056A/ja
Publication of JPH01147056A publication Critical patent/JPH01147056A/ja
Publication of JPH0246666B2 publication Critical patent/JPH0246666B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP30402987A 1987-11-30 1987-11-30 真空薄膜形成装置 Granted JPH01147056A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30402987A JPH01147056A (ja) 1987-11-30 1987-11-30 真空薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30402987A JPH01147056A (ja) 1987-11-30 1987-11-30 真空薄膜形成装置

Publications (2)

Publication Number Publication Date
JPH01147056A JPH01147056A (ja) 1989-06-08
JPH0246666B2 true JPH0246666B2 (en:Method) 1990-10-16

Family

ID=17928207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30402987A Granted JPH01147056A (ja) 1987-11-30 1987-11-30 真空薄膜形成装置

Country Status (1)

Country Link
JP (1) JPH01147056A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266161A (ja) * 1987-12-04 1990-03-06 Res Dev Corp Of Japan 真空蒸着装置
US5077875A (en) * 1990-01-31 1992-01-07 Raytheon Company Reactor vessel for the growth of heterojunction devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153775A (ja) * 1982-03-08 1983-09-12 Nippon Telegr & Teleph Corp <Ntt> 薄膜の製造方法

Also Published As

Publication number Publication date
JPH01147056A (ja) 1989-06-08

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