JPH024146B2 - - Google Patents
Info
- Publication number
- JPH024146B2 JPH024146B2 JP57013850A JP1385082A JPH024146B2 JP H024146 B2 JPH024146 B2 JP H024146B2 JP 57013850 A JP57013850 A JP 57013850A JP 1385082 A JP1385082 A JP 1385082A JP H024146 B2 JPH024146 B2 JP H024146B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- field effect
- electrode
- semiconductor device
- barrier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1385082A JPS58131775A (ja) | 1982-01-29 | 1982-01-29 | 電界効果半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1385082A JPS58131775A (ja) | 1982-01-29 | 1982-01-29 | 電界効果半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131775A JPS58131775A (ja) | 1983-08-05 |
| JPH024146B2 true JPH024146B2 (fr) | 1990-01-26 |
Family
ID=11844749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1385082A Granted JPS58131775A (ja) | 1982-01-29 | 1982-01-29 | 電界効果半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131775A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217743A (ja) * | 1990-01-23 | 1991-09-25 | Fujitsu General Ltd | 空気調和機の運転制御方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2577719B2 (ja) * | 1984-07-06 | 1997-02-05 | テキサス インスツルメンツ インコ−ポレイテツド | 電界効果トランジスタのソース電極構造 |
| FR2583221B1 (fr) * | 1985-06-07 | 1987-07-31 | Labo Electronique Physique | Dispositif semiconducteur pour la realisation des capacites de decouplage placees entre l'alimentation et la masse des circuits integres |
| US6822321B2 (en) * | 2002-09-30 | 2004-11-23 | Cree Microwave, Inc. | Packaged RF power transistor having RF bypassing/output matching network |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5588366A (en) * | 1978-12-27 | 1980-07-04 | Fujitsu Ltd | Semiconductor device |
-
1982
- 1982-01-29 JP JP1385082A patent/JPS58131775A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5588366A (en) * | 1978-12-27 | 1980-07-04 | Fujitsu Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217743A (ja) * | 1990-01-23 | 1991-09-25 | Fujitsu General Ltd | 空気調和機の運転制御方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58131775A (ja) | 1983-08-05 |
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