JPH024146B2 - - Google Patents

Info

Publication number
JPH024146B2
JPH024146B2 JP57013850A JP1385082A JPH024146B2 JP H024146 B2 JPH024146 B2 JP H024146B2 JP 57013850 A JP57013850 A JP 57013850A JP 1385082 A JP1385082 A JP 1385082A JP H024146 B2 JPH024146 B2 JP H024146B2
Authority
JP
Japan
Prior art keywords
source
field effect
electrode
semiconductor device
barrier diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57013850A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58131775A (ja
Inventor
Kyoichi Ishii
Masumi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57013850A priority Critical patent/JPS58131775A/ja
Publication of JPS58131775A publication Critical patent/JPS58131775A/ja
Publication of JPH024146B2 publication Critical patent/JPH024146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57013850A 1982-01-29 1982-01-29 電界効果半導体装置 Granted JPS58131775A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57013850A JPS58131775A (ja) 1982-01-29 1982-01-29 電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57013850A JPS58131775A (ja) 1982-01-29 1982-01-29 電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS58131775A JPS58131775A (ja) 1983-08-05
JPH024146B2 true JPH024146B2 (enrdf_load_stackoverflow) 1990-01-26

Family

ID=11844749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57013850A Granted JPS58131775A (ja) 1982-01-29 1982-01-29 電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS58131775A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03217743A (ja) * 1990-01-23 1991-09-25 Fujitsu General Ltd 空気調和機の運転制御方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577719B2 (ja) * 1984-07-06 1997-02-05 テキサス インスツルメンツ インコ−ポレイテツド 電界効果トランジスタのソース電極構造
FR2583221B1 (fr) * 1985-06-07 1987-07-31 Labo Electronique Physique Dispositif semiconducteur pour la realisation des capacites de decouplage placees entre l'alimentation et la masse des circuits integres
US6822321B2 (en) * 2002-09-30 2004-11-23 Cree Microwave, Inc. Packaged RF power transistor having RF bypassing/output matching network

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588366A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03217743A (ja) * 1990-01-23 1991-09-25 Fujitsu General Ltd 空気調和機の運転制御方法

Also Published As

Publication number Publication date
JPS58131775A (ja) 1983-08-05

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