JPH0235448B2 - - Google Patents

Info

Publication number
JPH0235448B2
JPH0235448B2 JP59238565A JP23856584A JPH0235448B2 JP H0235448 B2 JPH0235448 B2 JP H0235448B2 JP 59238565 A JP59238565 A JP 59238565A JP 23856584 A JP23856584 A JP 23856584A JP H0235448 B2 JPH0235448 B2 JP H0235448B2
Authority
JP
Japan
Prior art keywords
pattern
resist film
film
resist
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59238565A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61117832A (ja
Inventor
Yoshio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59238565A priority Critical patent/JPS61117832A/ja
Publication of JPS61117832A publication Critical patent/JPS61117832A/ja
Publication of JPH0235448B2 publication Critical patent/JPH0235448B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59238565A 1984-11-14 1984-11-14 半導体装置の製造方法 Granted JPS61117832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59238565A JPS61117832A (ja) 1984-11-14 1984-11-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238565A JPS61117832A (ja) 1984-11-14 1984-11-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61117832A JPS61117832A (ja) 1986-06-05
JPH0235448B2 true JPH0235448B2 (enrdf_load_stackoverflow) 1990-08-10

Family

ID=17032112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59238565A Granted JPS61117832A (ja) 1984-11-14 1984-11-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61117832A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60305584T2 (de) 2002-07-26 2007-05-24 Asml Masktools B.V. Richtungsabhängige Abschirmung zur Benutzung mit Dipolbelichtung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS5558534A (en) * 1978-10-24 1980-05-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS61117832A (ja) 1986-06-05

Similar Documents

Publication Publication Date Title
US6100014A (en) Method of forming an opening in a dielectric layer through a photoresist layer with silylated sidewall spacers
US5300379A (en) Method of fabrication of inverted phase-shifted reticle
JP3912949B2 (ja) フォトマスクの形成方法及び半導体装置の製造方法
KR20010004612A (ko) 포토 마스크 및 이를 이용한 반도체 소자의 미세패턴 형성방법
JPH05326358A (ja) 微細パターン形成方法
JPH0235448B2 (enrdf_load_stackoverflow)
JPH0448715A (ja) 半導体装置の製造方法
JPH0458167B2 (enrdf_load_stackoverflow)
JPH09232315A (ja) 半導体装置の製造方法
JPS61113062A (ja) フオトマスク
JPH04291345A (ja) パターン形成方法
KR100326430B1 (ko) 감광막패턴형성방법
KR100289664B1 (ko) 노광 마스크의 제조방법
JPH0473651A (ja) 位相シフトマスクの形成方法
KR0137997B1 (ko) 반도체 소자의 콘택홀 제조방법
JPH03142466A (ja) 半導体装置の製造方法及びそれに用いられるマスク
KR0138066B1 (ko) 위상반전마스크 제작 방법
KR970009821B1 (ko) 반도체소자의 제조방법
KR950000090B1 (ko) 반도체장치의 제조방법
KR100257770B1 (ko) 반도체 소자의 미세한 전도막 패턴 형성 방법
JP2555879B2 (ja) 半導体装置の製造方法
KR100480811B1 (ko) 노광 마스크 및 그를 이용한 노광 방법
JPH09213609A (ja) 半導体装置の製造方法
KR100333537B1 (ko) 반도체소자의콘택제조방법
JPH0766113A (ja) レチクル及び位置合わせ用バーニアの形成方法