JPH0230120B2 - - Google Patents
Info
- Publication number
- JPH0230120B2 JPH0230120B2 JP56112146A JP11214681A JPH0230120B2 JP H0230120 B2 JPH0230120 B2 JP H0230120B2 JP 56112146 A JP56112146 A JP 56112146A JP 11214681 A JP11214681 A JP 11214681A JP H0230120 B2 JPH0230120 B2 JP H0230120B2
- Authority
- JP
- Japan
- Prior art keywords
- write
- circuit
- output
- data line
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000011084 recovery Methods 0.000 claims description 15
- 230000003068 static effect Effects 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112146A JPS5814396A (ja) | 1981-07-20 | 1981-07-20 | Ｍｏｓスタテイツク型ｒａｍ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112146A JPS5814396A (ja) | 1981-07-20 | 1981-07-20 | Ｍｏｓスタテイツク型ｒａｍ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814396A JPS5814396A (ja) | 1983-01-27 |
| JPH0230120B2 true JPH0230120B2 (OSRAM) | 1990-07-04 |
Family
ID=14579372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56112146A Granted JPS5814396A (ja) | 1981-07-20 | 1981-07-20 | Ｍｏｓスタテイツク型ｒａｍ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814396A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831275B2 (ja) * | 1986-09-09 | 1996-03-27 | 日本電気株式会社 | メモリ回路 |
| JPH0711919B2 (ja) * | 1988-03-30 | 1995-02-08 | 株式会社東芝 | スタティック型ランダムアクセスメモリ |
-
1981
- 1981-07-20 JP JP56112146A patent/JPS5814396A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| IEEE JOURNAL OF SOUD-STATE CIRCUITS=1978 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814396A (ja) | 1983-01-27 |
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