JPH0226385B2 - - Google Patents

Info

Publication number
JPH0226385B2
JPH0226385B2 JP58197047A JP19704783A JPH0226385B2 JP H0226385 B2 JPH0226385 B2 JP H0226385B2 JP 58197047 A JP58197047 A JP 58197047A JP 19704783 A JP19704783 A JP 19704783A JP H0226385 B2 JPH0226385 B2 JP H0226385B2
Authority
JP
Japan
Prior art keywords
wiring
photoresist layer
forming
layer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58197047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6088444A (ja
Inventor
Yoichi Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP19704783A priority Critical patent/JPS6088444A/ja
Publication of JPS6088444A publication Critical patent/JPS6088444A/ja
Publication of JPH0226385B2 publication Critical patent/JPH0226385B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP19704783A 1983-10-21 1983-10-21 立体配線の形成方法 Granted JPS6088444A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19704783A JPS6088444A (ja) 1983-10-21 1983-10-21 立体配線の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19704783A JPS6088444A (ja) 1983-10-21 1983-10-21 立体配線の形成方法

Publications (2)

Publication Number Publication Date
JPS6088444A JPS6088444A (ja) 1985-05-18
JPH0226385B2 true JPH0226385B2 (OSRAM) 1990-06-08

Family

ID=16367825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19704783A Granted JPS6088444A (ja) 1983-10-21 1983-10-21 立体配線の形成方法

Country Status (1)

Country Link
JP (1) JPS6088444A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240744A (ja) * 1985-08-19 1987-02-21 Nippon Telegr & Teleph Corp <Ntt> 集積回路配線の製作方法
JP4736014B2 (ja) * 2004-04-07 2011-07-27 大日本印刷株式会社 発光素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115065A (en) * 1978-02-28 1979-09-07 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6088444A (ja) 1985-05-18

Similar Documents

Publication Publication Date Title
JP2637937B2 (ja) 電界効果トランジスタの製造方法
JPH0334547A (ja) 半導体装置の製造方法
GB2222308A (en) A method of producing a semiconductor device
JPH05275373A (ja) 化合物半導体装置の製造方法
JPH0226385B2 (OSRAM)
JPH0472381B2 (OSRAM)
JP2712340B2 (ja) 半導体装置の製造方法
JPH0226386B2 (OSRAM)
JPH0684950A (ja) 電界効果トランジスタの製造方法
JPS6088445A (ja) 立体配線の形成方法
JP2825284B2 (ja) 半導体装置の製造方法
JP2557432B2 (ja) 電界効果トランジスタ
JPH07107906B2 (ja) 半導体装置の製造方法
JPS58197883A (ja) 半導体装置の製造法
JPS5833714B2 (ja) 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法
JPS58135678A (ja) 電界効果トランジスタの製造方法
JPS616870A (ja) 電界効果トランジスタの製造方法
JP2002043317A (ja) 半導体装置の製造方法
JPH0260213B2 (OSRAM)
JPH0330438A (ja) 半導体装置の製造方法
JPS6050967A (ja) 電界効果トランジスタの製造方法
JPH05275454A (ja) 化合物半導体装置およびその製造方法
JPS613466A (ja) 半導体装置の製造方法
JPS58112373A (ja) ＧａＡｓ集積回路の製造方法
JPH0713978B2 (ja) 半導体装置の製造方法