JPH022295B2 - - Google Patents

Info

Publication number
JPH022295B2
JPH022295B2 JP57050404A JP5040482A JPH022295B2 JP H022295 B2 JPH022295 B2 JP H022295B2 JP 57050404 A JP57050404 A JP 57050404A JP 5040482 A JP5040482 A JP 5040482A JP H022295 B2 JPH022295 B2 JP H022295B2
Authority
JP
Japan
Prior art keywords
resistor
pattern
resistance
elements
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57050404A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57202774A (en
Inventor
Ichiuemon Sasaki
Isamu Takashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57050404A priority Critical patent/JPS57202774A/ja
Publication of JPS57202774A publication Critical patent/JPS57202774A/ja
Publication of JPH022295B2 publication Critical patent/JPH022295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57050404A 1982-03-29 1982-03-29 Semiconductor device Granted JPS57202774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57050404A JPS57202774A (en) 1982-03-29 1982-03-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050404A JPS57202774A (en) 1982-03-29 1982-03-29 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48097567A Division JPS5947463B2 (ja) 1973-08-29 1973-08-29 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS57202774A JPS57202774A (en) 1982-12-11
JPH022295B2 true JPH022295B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=12857923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050404A Granted JPS57202774A (en) 1982-03-29 1982-03-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202774A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098173B1 (en) * 1982-06-30 1990-04-11 Fujitsu Limited Semiconductor integrated-circuit apparatus
JP3028420B2 (ja) * 1988-09-05 2000-04-04 セイコーエプソン株式会社 半導体集積装置
US6476695B1 (en) 1999-05-26 2002-11-05 Sharp Kabushiki Kaisha High frequency module
JP4113199B2 (ja) 2005-04-05 2008-07-09 株式会社東芝 半導体装置
WO2020203507A1 (ja) * 2019-04-01 2020-10-08 パナソニックセミコンダクターソリューションズ株式会社 モノリシック半導体装置およびハイブリッド半導体装置

Also Published As

Publication number Publication date
JPS57202774A (en) 1982-12-11

Similar Documents

Publication Publication Date Title
US8580685B2 (en) Integrated circuit having interleaved gridded features, mask set, and method for printing
US4806457A (en) Method of manufacturing integrated circuit semiconductor device
CN110824847B (zh) 提高套刻精度的刻蚀方法
JPH022295B2 (enrdf_load_stackoverflow)
JPH08274004A (ja) 半導体装置
JPH022296B2 (enrdf_load_stackoverflow)
JP3164779B2 (ja) ホトマスク
JPS5947463B2 (ja) 半導体集積回路装置
US6368754B1 (en) Reticle used for fabrication of semiconductor device
JPS5821433B2 (ja) 半導体集積回路装置の製造方法
JPH0795543B2 (ja) エツチング方法
JPH0448715A (ja) 半導体装置の製造方法
KR0135695B1 (ko) 반도체소자
KR100268425B1 (ko) 마스크 패턴 레이아웃 구조
JPH07161633A (ja) 半導体装置を形成する方法
JPH02189913A (ja) 半導体装置のパターン形成方法
JPH1140670A (ja) 半導体装置およびその製造方法
KR19990039033A (ko) 테스트 패턴 형성 방법
JP3270359B2 (ja) 半導体装置製造用フォトレチクル
KR0167608B1 (ko) 롬의 게이트 전극 제조 방법
JPS61270169A (ja) サ−マルヘツドの製造方法
JPS6347924A (ja) 半導体装置の製造方法
JPS622764Y2 (enrdf_load_stackoverflow)
JPH02226724A (ja) 集積回路装置の製造方法
JPS59130434A (ja) 半導体装置