JPS57202774A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57202774A
JPS57202774A JP57050404A JP5040482A JPS57202774A JP S57202774 A JPS57202774 A JP S57202774A JP 57050404 A JP57050404 A JP 57050404A JP 5040482 A JP5040482 A JP 5040482A JP S57202774 A JPS57202774 A JP S57202774A
Authority
JP
Japan
Prior art keywords
resistance
resistors
elements
group
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57050404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH022295B2 (enrdf_load_stackoverflow
Inventor
Ichiemon Sasaki
Isamu Takashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57050404A priority Critical patent/JPS57202774A/ja
Publication of JPS57202774A publication Critical patent/JPS57202774A/ja
Publication of JPH022295B2 publication Critical patent/JPH022295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57050404A 1982-03-29 1982-03-29 Semiconductor device Granted JPS57202774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57050404A JPS57202774A (en) 1982-03-29 1982-03-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050404A JPS57202774A (en) 1982-03-29 1982-03-29 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48097567A Division JPS5947463B2 (ja) 1973-08-29 1973-08-29 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS57202774A true JPS57202774A (en) 1982-12-11
JPH022295B2 JPH022295B2 (enrdf_load_stackoverflow) 1990-01-17

Family

ID=12857923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050404A Granted JPS57202774A (en) 1982-03-29 1982-03-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202774A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904887A (en) * 1982-06-30 1990-02-27 Fujitsu Limited Semiconductor integrated circuit apparatus
JPH0269972A (ja) * 1988-09-05 1990-03-08 Seiko Epson Corp 半導体集積装置
US6476695B1 (en) 1999-05-26 2002-11-05 Sharp Kabushiki Kaisha High frequency module
US8044450B2 (en) 2005-04-05 2011-10-25 Kabushiki Kaisha Toshiba Semiconductor device with a non-volatile memory and resistor
WO2020203507A1 (ja) * 2019-04-01 2020-10-08 パナソニックセミコンダクターソリューションズ株式会社 モノリシック半導体装置およびハイブリッド半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904887A (en) * 1982-06-30 1990-02-27 Fujitsu Limited Semiconductor integrated circuit apparatus
JPH0269972A (ja) * 1988-09-05 1990-03-08 Seiko Epson Corp 半導体集積装置
US6476695B1 (en) 1999-05-26 2002-11-05 Sharp Kabushiki Kaisha High frequency module
US8044450B2 (en) 2005-04-05 2011-10-25 Kabushiki Kaisha Toshiba Semiconductor device with a non-volatile memory and resistor
WO2020203507A1 (ja) * 2019-04-01 2020-10-08 パナソニックセミコンダクターソリューションズ株式会社 モノリシック半導体装置およびハイブリッド半導体装置
US12183817B2 (en) 2019-04-01 2024-12-31 Nuvoton Technology Corporation Japan Monolithic semiconductor device and hybrid semiconductor device

Also Published As

Publication number Publication date
JPH022295B2 (enrdf_load_stackoverflow) 1990-01-17

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