GB1250988A - - Google Patents
Info
- Publication number
- GB1250988A GB1250988A GB4079969A GB1250988DA GB1250988A GB 1250988 A GB1250988 A GB 1250988A GB 4079969 A GB4079969 A GB 4079969A GB 1250988D A GB1250988D A GB 1250988DA GB 1250988 A GB1250988 A GB 1250988A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- ratio
- region
- resistor
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4079969 | 1969-08-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1250988A true GB1250988A (enrdf_load_stackoverflow) | 1971-10-27 |
Family
ID=10416672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4079969A Expired GB1250988A (enrdf_load_stackoverflow) | 1969-08-14 | 1969-08-14 |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1250988A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4725876A (en) * | 1981-05-27 | 1988-02-16 | Nippon Electric Co., Ltd. | Semiconductor device having at least two resistors with high resistance values |
US4757368A (en) * | 1980-12-15 | 1988-07-12 | Fujitsu Limited | Semiconductor device having electric contacts with precise resistance values |
-
1969
- 1969-08-14 GB GB4079969A patent/GB1250988A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4757368A (en) * | 1980-12-15 | 1988-07-12 | Fujitsu Limited | Semiconductor device having electric contacts with precise resistance values |
US4725876A (en) * | 1981-05-27 | 1988-02-16 | Nippon Electric Co., Ltd. | Semiconductor device having at least two resistors with high resistance values |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1236403A (en) | Improvements relating to a semiconductor resistor | |
US3644802A (en) | Ratio-compensated resistors for integrated circuit | |
GB1080177A (en) | Improved method of manufacturing planar transistors | |
US3468728A (en) | Method for forming ohmic contact for a semiconductor device | |
FR89742E (fr) | Perfectionnements apportés aux douilles, pour contacts électriques à fiches et douilles, et à leurs procédés de fabrication | |
US4584553A (en) | Coated layer type resistor device | |
GB1087405A (en) | Improvements in or relating to resistors | |
GB1250988A (enrdf_load_stackoverflow) | ||
GB1278443A (en) | Semiconductor devices | |
GB1415785A (en) | Method of providing a resistor | |
US3593069A (en) | Integrated circuit resistor and method of making the same | |
GB1019213A (en) | Solid circuits comprising field-effect devices known as gridistors | |
US3943546A (en) | Transistor | |
JPS5768055A (en) | Semiconductor device | |
GB1225698A (enrdf_load_stackoverflow) | ||
JPS57202774A (en) | Semiconductor device | |
US4757368A (en) | Semiconductor device having electric contacts with precise resistance values | |
JPS5650553A (en) | Semiconductor device | |
GB1313915A (en) | Resistors for integrated circuits | |
JP2653046B2 (ja) | リニアアレイ | |
GB1363815A (en) | Semiconductor device and method of producing same | |
JPS61229302A (ja) | 並置型抵抗体装置 | |
JPS5613759A (en) | Hybrid integrated circuit | |
JPS55125645A (en) | Production of semiconductor device | |
JPH01143251A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |