GB1250988A - - Google Patents
Info
- Publication number
- GB1250988A GB1250988A GB1250988DA GB1250988A GB 1250988 A GB1250988 A GB 1250988A GB 1250988D A GB1250988D A GB 1250988DA GB 1250988 A GB1250988 A GB 1250988A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- ratio
- region
- resistor
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1,250,988. Integrated circuit resistors. RCA CORPORATION. 14 Aug., 1969, No. 40799/69. Heading H1K. A semi-conductor integrated circuit device of the monolithic type includes two resistors of different value, the resistors being used in conditions such that the ratio between their values is of circuit significance. The invention relates to a method of constructing such a device so that discrepancies introduced during manufacture affect the two resistance values similarly whereby the ratio is held within acceptable limits. As shown, a silicon body 12 has a first resistor 14 and a second resistor 15 of lower value, the resistance ratio being 3 : 1. The resistors 14, 15 are formed by conventional photo-etching processes and comprise diffused regions 16, 30, respectively, adjacent the body surface 18, this surface having an insulating coating 20 of silicon dioxide. Openings 22, 24 in the coating 20 receive, respectively, portions 27, 29 of conductors 26, 28 to make contact with the ends of the resistor 14. The region 30 comprises three regions 31, 32, 33 separated by non- diffused regions 34, 35 and connected at their ends by enlarged diffused regions 36, 37. Openings 38, 39 in the coating 20 above the regions 36, 37 receive, respectively, portions 40, 42 of conductors 26, 41 whereby the regions 31, 32, 33 are connected in parallel between the conductors. Each of the regions 31, 32, 33 has approximately the same thickness, width and length as the region 16 so that manufacturing discrepancies produce the same effect in each of the four regions and the ratio mentioned above is not disturbed. In another embodiment (Figs. 5, 6, not shown) having a 9 : 1 ratio, the single diffused region of the higher value resistor has a length equal to three times that of the three parallel-connected regions of the lower value resistor. To maintain this ratio, manufacturing discrepancies are allowed for by providing two openings in the coating 20 above the single diffused region at positions so as to divide this region into three equal parts between the conductors connected to the ends of the region, conducting members being positioned in each of the two openings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4079969 | 1969-08-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1250988A true GB1250988A (en) | 1971-10-27 |
Family
ID=10416672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1250988D Expired GB1250988A (en) | 1969-08-14 | 1969-08-14 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1250988A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4725876A (en) * | 1981-05-27 | 1988-02-16 | Nippon Electric Co., Ltd. | Semiconductor device having at least two resistors with high resistance values |
| US4757368A (en) * | 1980-12-15 | 1988-07-12 | Fujitsu Limited | Semiconductor device having electric contacts with precise resistance values |
-
1969
- 1969-08-14 GB GB1250988D patent/GB1250988A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757368A (en) * | 1980-12-15 | 1988-07-12 | Fujitsu Limited | Semiconductor device having electric contacts with precise resistance values |
| US4725876A (en) * | 1981-05-27 | 1988-02-16 | Nippon Electric Co., Ltd. | Semiconductor device having at least two resistors with high resistance values |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |