JPS57128949A - Electric resistance device - Google Patents

Electric resistance device

Info

Publication number
JPS57128949A
JPS57128949A JP1428881A JP1428881A JPS57128949A JP S57128949 A JPS57128949 A JP S57128949A JP 1428881 A JP1428881 A JP 1428881A JP 1428881 A JP1428881 A JP 1428881A JP S57128949 A JPS57128949 A JP S57128949A
Authority
JP
Japan
Prior art keywords
resistor
diffused
region
pattern
diffused regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1428881A
Other languages
Japanese (ja)
Inventor
Kiyoshi Matsubara
Futoshi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP1428881A priority Critical patent/JPS57128949A/en
Publication of JPS57128949A publication Critical patent/JPS57128949A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve relative accuracy of resistance without increasing an area so much, by providing a plurality of resistor patterns which are arranged with an equal interval being provided. CONSTITUTION:Rectangular N<+> type diffused region 3a1, 3a2-3an-1, and 3an are formed as a resistor pattern on an SiO2 layer 2 which is formed by oxidizing one surface of a P type Si substrate pattern by an LOCOS method. All these diffused regions are formed in the same pattern and in the same size, and n number of them are arranged in parallel as a whole in the lateral direction. A pair of electrodes are deposited on each region. Of the n number of the diffused region, two diffused regions 3a1 and 3a2 located on both ends are not used as a primary role of resistor but are left alone. Meanwhile only the intermediate diffused regions 3a2-3an-1 are used as a primary role of a resistor. Therefore, the ambient conditions of the intermediate patterns are approximately equal, and the dispersion in resistance values becomes small.
JP1428881A 1981-02-04 1981-02-04 Electric resistance device Pending JPS57128949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1428881A JPS57128949A (en) 1981-02-04 1981-02-04 Electric resistance device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1428881A JPS57128949A (en) 1981-02-04 1981-02-04 Electric resistance device

Publications (1)

Publication Number Publication Date
JPS57128949A true JPS57128949A (en) 1982-08-10

Family

ID=11856902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1428881A Pending JPS57128949A (en) 1981-02-04 1981-02-04 Electric resistance device

Country Status (1)

Country Link
JP (1) JPS57128949A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269972A (en) * 1988-09-05 1990-03-08 Seiko Epson Corp Semiconductor integrated device
JPH04145655A (en) * 1990-10-08 1992-05-19 Nec Ic Microcomput Syst Ltd Semiconductor device
US8225240B2 (en) 2008-04-10 2012-07-17 Renesas Electronics Corporation Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269972A (en) * 1988-09-05 1990-03-08 Seiko Epson Corp Semiconductor integrated device
JPH04145655A (en) * 1990-10-08 1992-05-19 Nec Ic Microcomput Syst Ltd Semiconductor device
US8225240B2 (en) 2008-04-10 2012-07-17 Renesas Electronics Corporation Semiconductor device

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