JPS5688372A - Manufacture of semiconductor diaphragm - Google Patents

Manufacture of semiconductor diaphragm

Info

Publication number
JPS5688372A
JPS5688372A JP16601479A JP16601479A JPS5688372A JP S5688372 A JPS5688372 A JP S5688372A JP 16601479 A JP16601479 A JP 16601479A JP 16601479 A JP16601479 A JP 16601479A JP S5688372 A JPS5688372 A JP S5688372A
Authority
JP
Japan
Prior art keywords
substrate
diaphragm
etching
thickness
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16601479A
Other languages
Japanese (ja)
Other versions
JPS6154268B2 (en
Inventor
Yutaka Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16601479A priority Critical patent/JPS5688372A/en
Publication of JPS5688372A publication Critical patent/JPS5688372A/en
Publication of JPS6154268B2 publication Critical patent/JPS6154268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To form the thickness of the diaphragm as prescribed by forming a p-n junction for specifying the thickness of the diaphragm on a semiconductor substrate formed with a shallow gauge resistance region on the surface, etching it and finishing the etching when the p-n junction is exposed. CONSTITUTION:An SiO2 film 2 is covered on the surface of an n type Si substrate 1 formed with a plurality of p type gauge resistors 9 on the surface, two windows are opened at the region isolated from the resistors 9, p type regions 3, 5 are diffused in the substrate 1, and p-n junctions 4, 6 are formed between them and the substrate 1. Then, a series circuit having a DC power source 11 and an ammeter 12, a variable resistor 13 is connected between the electrodes 7 and 8 mounted on the regions 3 and 5 respectively, the substrate 1 is etched using a mask 10 formed on the back surface of the substrate 1, the time when the junctions 4 and 6 are exposed is notified by the fluctuation of the ammeter 12, and the etching is thus stopped thereat. Thus, the diaphragm having prescribed thickness can be obtained under the resistor 9.
JP16601479A 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm Granted JPS5688372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16601479A JPS5688372A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16601479A JPS5688372A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm

Publications (2)

Publication Number Publication Date
JPS5688372A true JPS5688372A (en) 1981-07-17
JPS6154268B2 JPS6154268B2 (en) 1986-11-21

Family

ID=15823297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16601479A Granted JPS5688372A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm

Country Status (1)

Country Link
JP (1) JPS5688372A (en)

Also Published As

Publication number Publication date
JPS6154268B2 (en) 1986-11-21

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