JPH0214527A - Mos型半導体装置 - Google Patents

Mos型半導体装置

Info

Publication number
JPH0214527A
JPH0214527A JP63285062A JP28506288A JPH0214527A JP H0214527 A JPH0214527 A JP H0214527A JP 63285062 A JP63285062 A JP 63285062A JP 28506288 A JP28506288 A JP 28506288A JP H0214527 A JPH0214527 A JP H0214527A
Authority
JP
Japan
Prior art keywords
semiconductor device
pad
active element
insulating film
pad portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63285062A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0474858B2 (enrdf_load_stackoverflow
Inventor
Hiroyoshi Ohira
大平 廣吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63285062A priority Critical patent/JPH0214527A/ja
Publication of JPH0214527A publication Critical patent/JPH0214527A/ja
Publication of JPH0474858B2 publication Critical patent/JPH0474858B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP63285062A 1988-11-11 1988-11-11 Mos型半導体装置 Granted JPH0214527A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63285062A JPH0214527A (ja) 1988-11-11 1988-11-11 Mos型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63285062A JPH0214527A (ja) 1988-11-11 1988-11-11 Mos型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55163567A Division JPS5787145A (en) 1980-11-20 1980-11-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0214527A true JPH0214527A (ja) 1990-01-18
JPH0474858B2 JPH0474858B2 (enrdf_load_stackoverflow) 1992-11-27

Family

ID=17686667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63285062A Granted JPH0214527A (ja) 1988-11-11 1988-11-11 Mos型半導体装置

Country Status (1)

Country Link
JP (1) JPH0214527A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006576A1 (en) * 1998-11-30 2000-06-07 Sharp Kabushiki Kaisha Semiconductor device
JP2005252275A (ja) * 1996-03-13 2005-09-15 Seiko Instruments Inc 半導体集積回路とその製造方法
JP2007005539A (ja) * 2005-06-23 2007-01-11 Seiko Epson Corp 半導体装置
US8178981B2 (en) 2004-02-26 2012-05-15 Renesas Electronics Corporation Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017041566A (ja) 2015-08-20 2017-02-23 セイコーエプソン株式会社 半導体装置及びその製造方法、電子機器並びに移動体

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005252275A (ja) * 1996-03-13 2005-09-15 Seiko Instruments Inc 半導体集積回路とその製造方法
EP1006576A1 (en) * 1998-11-30 2000-06-07 Sharp Kabushiki Kaisha Semiconductor device
KR100356770B1 (ko) * 1998-11-30 2002-10-19 샤프 가부시키가이샤 반도체장치
US8178981B2 (en) 2004-02-26 2012-05-15 Renesas Electronics Corporation Semiconductor device
JP2007005539A (ja) * 2005-06-23 2007-01-11 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
JPH0474858B2 (enrdf_load_stackoverflow) 1992-11-27

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