JP2007005539A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007005539A JP2007005539A JP2005183365A JP2005183365A JP2007005539A JP 2007005539 A JP2007005539 A JP 2007005539A JP 2005183365 A JP2005183365 A JP 2005183365A JP 2005183365 A JP2005183365 A JP 2005183365A JP 2007005539 A JP2007005539 A JP 2007005539A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000010410 layer Substances 0.000 claims abstract description 123
- 239000011229 interlayer Substances 0.000 claims abstract description 14
- 230000015556 catabolic process Effects 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
【解決手段】 本発明の半導体装置は、
半導体層10と、
前記半導体層10に設けられた、ゲート絶縁層104、124及びゲート電極106、126を有するトランジスタ100、120と、
前記トランジスタ100、120の上方に設けられた層間絶縁層40と、
前記層間絶縁層40の上方に設けられ、前記ゲート電極106、126の少なくとも一部と上方から見て重なる電極パッド42と、を含み、
前記トランジスタ100、120は、前記ゲート電極106、126端の下方に、前記ゲート絶縁層104、124の膜厚と比して厚い絶縁層102、122が設けられている高耐圧トランジスタである。
【選択図】 図1
Description
半導体層と、
前記半導体層に設けられた、ゲート絶縁層及びゲート電極を有するトランジスタと、
前記トランジスタの上方に設けられた層間絶縁層と、
前記層間絶縁層の上方に設けられ、前記ゲート電極の少なくとも一部と上方から見て重なる電極パッドと、を含み、
前記トランジスタは、前記ゲート電極端の下方に、前記ゲート絶縁層の膜厚と比して厚い絶縁層が設けられている高耐圧トランジスタである。
さらに、前記電極パッドの上方であって、該電極パッドの少なくとも一部を露出させる開口を有するパッシべーション層と、
少なくとも前記開口に設けられたバンプと、を含むことができる。
上方からみて、前記ゲート電極の全てと前記電極パッドの一部とが重なっていることができる。
前記絶縁層は、LOCOS絶縁層又はトレンチ絶縁層であることができる。なお、本発明にかかる半導体装置において、LOCOS絶縁層というとき、LOCOS法により形成された絶縁層の他、セミリセスLOCOS法により形成された絶縁層をも含む。
Claims (4)
- 半導体層と、
前記半導体層に設けられた、ゲート絶縁層及びゲート電極を有するトランジスタと、
前記トランジスタの上方に設けられた層間絶縁層と、
前記層間絶縁層の上方に設けられ、前記ゲート電極の少なくとも一部と上方から見て重なる電極パッドと、を含み、
前記トランジスタは、前記ゲート電極端の下方に、前記ゲート絶縁層の膜厚と比して厚い絶縁層が設けられている高耐圧トランジスタである、半導体装置。 - 請求項1において、
さらに、前記電極パッドの上方であって、該電極パッドの少なくとも一部を露出させる開口を有するパッシべーション層と、
少なくとも前記開口に設けられたバンプと、を含む、半導体装置。 - 請求項1または2において、
上方からみて、前記ゲート電極の全てと前記電極パッドの一部とが重なっている、半導体装置。 - 請求項1ないし3のいずれかにおいて、
前記絶縁層は、LOCOS絶縁層又はトレンチ絶縁層である、半導体装置。
Priority Applications (4)
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JP2005183365A JP2007005539A (ja) | 2005-06-23 | 2005-06-23 | 半導体装置 |
US11/429,581 US7598569B2 (en) | 2005-06-23 | 2006-05-05 | Semiconductor device |
CNB200610087107XA CN100552972C (zh) | 2005-06-23 | 2006-06-09 | 半导体装置 |
KR1020060056838A KR100750446B1 (ko) | 2005-06-23 | 2006-06-23 | 반도체 장치 |
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JP2005183365A JP2007005539A (ja) | 2005-06-23 | 2005-06-23 | 半導体装置 |
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JP2007005539A true JP2007005539A (ja) | 2007-01-11 |
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JP2005183365A Pending JP2007005539A (ja) | 2005-06-23 | 2005-06-23 | 半導体装置 |
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US (1) | US7598569B2 (ja) |
JP (1) | JP2007005539A (ja) |
KR (1) | KR100750446B1 (ja) |
CN (1) | CN100552972C (ja) |
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KR101531880B1 (ko) * | 2008-12-30 | 2015-06-26 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
US11257774B2 (en) * | 2014-08-31 | 2022-02-22 | Skyworks Solutions, Inc. | Stack structures in electronic devices including passivation layers for distributing compressive force |
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US7598569B2 (en) | 2009-10-06 |
CN1885558A (zh) | 2006-12-27 |
KR20060134865A (ko) | 2006-12-28 |
KR100750446B1 (ko) | 2007-08-22 |
US20060289961A1 (en) | 2006-12-28 |
CN100552972C (zh) | 2009-10-21 |
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