JPH0474858B2 - - Google Patents

Info

Publication number
JPH0474858B2
JPH0474858B2 JP63285062A JP28506288A JPH0474858B2 JP H0474858 B2 JPH0474858 B2 JP H0474858B2 JP 63285062 A JP63285062 A JP 63285062A JP 28506288 A JP28506288 A JP 28506288A JP H0474858 B2 JPH0474858 B2 JP H0474858B2
Authority
JP
Japan
Prior art keywords
pad
insulating film
interlayer insulating
wiring metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63285062A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0214527A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP63285062A priority Critical patent/JPH0214527A/ja
Publication of JPH0214527A publication Critical patent/JPH0214527A/ja
Publication of JPH0474858B2 publication Critical patent/JPH0474858B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP63285062A 1988-11-11 1988-11-11 Mos型半導体装置 Granted JPH0214527A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63285062A JPH0214527A (ja) 1988-11-11 1988-11-11 Mos型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63285062A JPH0214527A (ja) 1988-11-11 1988-11-11 Mos型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55163567A Division JPS5787145A (en) 1980-11-20 1980-11-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0214527A JPH0214527A (ja) 1990-01-18
JPH0474858B2 true JPH0474858B2 (enrdf_load_stackoverflow) 1992-11-27

Family

ID=17686667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63285062A Granted JPH0214527A (ja) 1988-11-11 1988-11-11 Mos型半導体装置

Country Status (1)

Country Link
JP (1) JPH0214527A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786616B2 (en) 2015-08-20 2017-10-10 Seiko Epson Corporation Semiconductor apparatus, method for manufacturing the same, electronic device, and moving body

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4498182B2 (ja) * 1996-03-13 2010-07-07 セイコーインスツル株式会社 半導体集積回路とその製造方法
JP3398609B2 (ja) * 1998-11-30 2003-04-21 シャープ株式会社 半導体装置
JP2005243907A (ja) 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
JP2007005539A (ja) * 2005-06-23 2007-01-11 Seiko Epson Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786616B2 (en) 2015-08-20 2017-10-10 Seiko Epson Corporation Semiconductor apparatus, method for manufacturing the same, electronic device, and moving body

Also Published As

Publication number Publication date
JPH0214527A (ja) 1990-01-18

Similar Documents

Publication Publication Date Title
US4952994A (en) Input protection arrangement for VLSI integrated circuit devices
KR920003676B1 (ko) 반도체 장치
JPH0474858B2 (enrdf_load_stackoverflow)
JP3505433B2 (ja) 半導体装置
JPH09283525A (ja) 半導体装置
KR940004449B1 (ko) 반도체장치
JPH10275824A (ja) 半導体装置およびその製造方法
JPH0646662B2 (ja) 半導体装置
JPS632152B2 (enrdf_load_stackoverflow)
JPS62249467A (ja) 半導体集積回路装置
JP2642000B2 (ja) Mos集積回路装置
JP2559102B2 (ja) 半導体装置
JPH0526738Y2 (enrdf_load_stackoverflow)
JPH01128465A (ja) 静電破壊防止素子を具備した半導体装置
KR940004255B1 (ko) 반도체 집적회로장치
JPH062274Y2 (ja) 半導体集積回路装置
JPS6153756A (ja) 半導体装置
JPS6130297Y2 (enrdf_load_stackoverflow)
JPS614265A (ja) 半導体集積回路装置
JPS63152168A (ja) 半導体装置
JPS6218062A (ja) 半導体装置
JPH04370943A (ja) 半導体集積回路装置
JPH04186674A (ja) 半導体装置
JPS6222454B2 (enrdf_load_stackoverflow)
JPH04354158A (ja) 半導体素子