JPH021386B2 - - Google Patents
Info
- Publication number
- JPH021386B2 JPH021386B2 JP58004456A JP445683A JPH021386B2 JP H021386 B2 JPH021386 B2 JP H021386B2 JP 58004456 A JP58004456 A JP 58004456A JP 445683 A JP445683 A JP 445683A JP H021386 B2 JPH021386 B2 JP H021386B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding layer
- optical waveguide
- conductivity type
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005253 cladding Methods 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 44
- 230000003287 optical effect Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000470 constituent Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- 238000004943 liquid phase epitaxy Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP445683A JPS59129473A (ja) | 1983-01-14 | 1983-01-14 | 半導体レーザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP445683A JPS59129473A (ja) | 1983-01-14 | 1983-01-14 | 半導体レーザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59129473A JPS59129473A (ja) | 1984-07-25 |
| JPH021386B2 true JPH021386B2 (xx) | 1990-01-11 |
Family
ID=11584648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP445683A Granted JPS59129473A (ja) | 1983-01-14 | 1983-01-14 | 半導体レーザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59129473A (xx) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766992B2 (ja) * | 1984-12-21 | 1995-07-19 | ソニー株式会社 | ＡｌＧａＩｎＰ系半導体レーザとその製造方法 |
| JP2525776B2 (ja) * | 1986-07-15 | 1996-08-21 | 株式会社東芝 | 半導体装置の製造方法 |
| US5119388A (en) * | 1989-02-24 | 1992-06-02 | Laser Photonics, Inc. | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
| US5028563A (en) * | 1989-02-24 | 1991-07-02 | Laser Photonics, Inc. | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
| JP2586826B2 (ja) * | 1994-06-21 | 1997-03-05 | ソニー株式会社 | ＡｌＧａＩｎＰ系半導体レーザとその製法 |
| US6567443B2 (en) * | 1999-09-29 | 2003-05-20 | Xerox Corporation | Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes |
| JP2006005167A (ja) * | 2004-06-17 | 2006-01-05 | Sumitomo Electric Ind Ltd | 半導体光素子 |
| JP4461980B2 (ja) | 2004-09-22 | 2010-05-12 | 住友電気工業株式会社 | 半導体光素子 |
| JP4424223B2 (ja) | 2005-03-01 | 2010-03-03 | 住友電気工業株式会社 | 半導体光素子 |
| JP5463760B2 (ja) | 2009-07-02 | 2014-04-09 | 三菱電機株式会社 | 光導波路集積型半導体光素子およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS526093A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Production method of semiconductor device |
-
1983
- 1983-01-14 JP JP445683A patent/JPS59129473A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS526093A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Production method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59129473A (ja) | 1984-07-25 |
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