JPH0546116B2 - - Google Patents
Info
- Publication number
- JPH0546116B2 JPH0546116B2 JP4691284A JP4691284A JPH0546116B2 JP H0546116 B2 JPH0546116 B2 JP H0546116B2 JP 4691284 A JP4691284 A JP 4691284A JP 4691284 A JP4691284 A JP 4691284A JP H0546116 B2 JPH0546116 B2 JP H0546116B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- guide layer
- forbidden band
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005253 cladding Methods 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 59
- 230000003287 optical effect Effects 0.000 claims description 46
- 239000012535 impurity Substances 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000010355 oscillation Effects 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4691284A JPS60189984A (ja) | 1984-03-12 | 1984-03-12 | 半導体レ−ザとその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4691284A JPS60189984A (ja) | 1984-03-12 | 1984-03-12 | 半導体レ−ザとその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60189984A JPS60189984A (ja) | 1985-09-27 |
| JPH0546116B2 true JPH0546116B2 (xx) | 1993-07-13 |
Family
ID=12760556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4691284A Granted JPS60189984A (ja) | 1984-03-12 | 1984-03-12 | 半導体レ−ザとその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60189984A (xx) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299186A (ja) * | 1987-05-29 | 1988-12-06 | Hitachi Ltd | 発光素子 |
-
1984
- 1984-03-12 JP JP4691284A patent/JPS60189984A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60189984A (ja) | 1985-09-27 |
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