JPH021386B2 - - Google Patents
Info
- Publication number
- JPH021386B2 JPH021386B2 JP58004456A JP445683A JPH021386B2 JP H021386 B2 JPH021386 B2 JP H021386B2 JP 58004456 A JP58004456 A JP 58004456A JP 445683 A JP445683 A JP 445683A JP H021386 B2 JPH021386 B2 JP H021386B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding layer
- optical waveguide
- conductivity type
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005253 cladding Methods 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 44
- 230000003287 optical effect Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000470 constituent Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- 238000004943 liquid phase epitaxy Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、半導体レーザ装置の製造方法の改良
に係わり、特にAlを構成元素として含む−
族半導体材料を用いた半導体レーザ装置及びその
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a method for manufacturing a semiconductor laser device, and particularly relates to an improvement in a method for manufacturing a semiconductor laser device.
The present invention relates to a semiconductor laser device using a group semiconductor material and a method for manufacturing the same.
近時、−族系半導体材料を用いて室温連続
発振を可能とした各種の化合物半導体レーザが開
発されている。この種の半導体レーザにおいて、
安定な基本横モード発振及び非点収差のないレー
ザビームを得るために作り付け導波路構造によつ
て横モードを制御することは、半導体レーザの応
用範囲を拡げる上で極めて重要な技術である。こ
のような作り付け導波路構造を有する半導体レー
ザの１つとして、第１図に示す如き埋め込み構造
レーザが知られている。なお、図中１は半導体基
板、２は第１クラツド層、３は活性層、４は第２
クラツド層、５はオーミツクコンタクト層、６は
埋め込み層、７は絶縁層、８，９は電極を示して
いる。このレーザでは、ストライプ状の発光領域
を形成するため、基板１上に各層２，〜，５を成
長したのち、基板１に至るまで深くエツチングす
る必要がある。この場合、通常のエツチングでは
深さ方向と同時に横方向にもエツチングが進行す
るため、活性層３からなる発光領域の幅Ｗが変化
し、所望の横モードを再現性良く実現することは
困難である。
Recently, various compound semiconductor lasers that are capable of continuous oscillation at room temperature have been developed using - group semiconductor materials. In this type of semiconductor laser,
Controlling the transverse mode using a built-in waveguide structure in order to obtain stable fundamental transverse mode oscillation and a laser beam without astigmatism is an extremely important technique for expanding the range of applications of semiconductor lasers. As one type of semiconductor laser having such a built-in waveguide structure, a buried structure laser as shown in FIG. 1 is known. In the figure, 1 is the semiconductor substrate, 2 is the first cladding layer, 3 is the active layer, and 4 is the second cladding layer.
A cladding layer, 5 an ohmic contact layer, 6 a buried layer, 7 an insulating layer, and 8 and 9 electrodes. In this laser, in order to form a striped light emitting region, it is necessary to grow each layer 2, . In this case, in normal etching, etching progresses in the lateral direction as well as in the depth direction, so the width W of the light emitting region made of the active layer 3 changes, making it difficult to realize the desired lateral mode with good reproducibility. be.
そこで最近、上記問題を解決するものとして第
２図に示す如く活性層３上に光導波路層１０を成
長形成し、活性層３及び光導波路層１０をストラ
イプ状に加工した半導体レーザが提案されてい
る。このレーザでは、発光領域を規定するための
エツチングを活性層３の直下の浅いエツチングと
することによつて、横方向のエツチングを最小限
に抑えることができる。このため、所望の横モー
ドを再現性良く実現できる。また、活性層３上に
光導波路層１０を有することから、横方向の屈折
率変化が小さく基本横モード発振が得易い、活性
層３に垂直な方向のビーム放射角を小さくでき
る、及び大きな出力が得られる等の利点を持つ。 Recently, as a solution to the above problem, a semiconductor laser has been proposed in which an optical waveguide layer 10 is grown on an active layer 3 and the active layer 3 and optical waveguide layer 10 are processed into stripes as shown in FIG. There is. In this laser, lateral etching can be minimized by shallowly etching just below the active layer 3 for defining the light emitting region. Therefore, a desired transverse mode can be realized with good reproducibility. In addition, since the optical waveguide layer 10 is provided on the active layer 3, the change in the refractive index in the lateral direction is small, making it easy to obtain fundamental transverse mode oscillation, the beam radiation angle in the direction perpendicular to the active layer 3 can be made small, and the output is large. It has advantages such as being able to obtain
しかしながら、この種のレーザでは、前記第１
クラツド層２若しくは光導波路層１０としてAlx
Ga1-xAs、AlxGa1-xAsP及びIny（AlxGa1-x）1-yＰ
等のAlを構成元素として含む材料を用いた場合、
前記第２図の構造を実現することは困難であつ
た。すなわち、第２図の構造を実現するには、光
導波路層１０までの結晶成長を行つたのち、エツ
チング等により光導波路層１０及び活性層３をメ
サストライプ状に加工し、その上に第２クラツド
層及びオーミツクコンタクト層５の結晶成長を行
う必要がある。これを、従来の液相成長（LPE）
法で行う場合、Alを含む第１クラツド層２及び
光導波路層１０の表面に前記エツチング等の工程
で酸化層が形成されるため、さらに一旦大気にさ
らされたAlを含む各層２，１０の表面に酸化層
が形成されるため、この上に形成すべきクラツド
層４の結晶成長が困難となる。特に、族の構成
元素中のAlの割合ｘがｘ＞0.1の化合物半導体層
上への上記条件下での結晶成長は、従来殆んど不
可能と考えられている（文献IEEE Journal of
Quantum Electronics、Vol、QE−15、NO6、
June（1979）．P458）。このため、第２図に示す構
造のレーザは、InGaAsP系等のAlを含まない材
料のみで実現でき、Alを含む材料に関しては実
現困難であると考えられていた。 However, in this type of laser, the first
Al x as the cladding layer 2 or the optical waveguide layer 10
Ga 1-x As, Al x Ga 1-x AsP and In y (Al x Ga 1-x ) 1-y P
When using materials containing Al as a constituent element,
It was difficult to realize the structure shown in FIG. 2. That is, in order to realize the structure shown in FIG. 2, after crystal growth is performed up to the optical waveguide layer 10, the optical waveguide layer 10 and the active layer 3 are processed into a mesa stripe shape by etching, etc. It is necessary to perform crystal growth of the cladding layer and the ohmic contact layer 5. This is done using conventional liquid phase epitaxy (LPE).
When etching is performed using the etching method, an oxide layer is formed on the surfaces of the first cladding layer 2 and the optical waveguide layer 10 containing Al in the process such as etching. Since an oxide layer is formed on the surface, crystal growth of the cladding layer 4 to be formed thereon becomes difficult. In particular, it has been considered almost impossible to grow crystals under the above conditions on a compound semiconductor layer in which the proportion x of Al in the group constituent elements is x > 0.1 (Reference IEEE Journal of
Quantum Electronics, Vol, QE−15, NO6,
June (1979). P458). For this reason, it was thought that the laser having the structure shown in FIG. 2 could be realized only with materials that do not contain Al, such as InGaAsP, and would be difficult to realize with materials that contain Al.
本発明の目的は、Alを構成要素として含む材
料を用い、メサストライプ状に加工された光導波
路層及び第１クラツド層上への第２クラツド層の
結晶成形を可能にして、前記第２図に示す構造の
レーザを実現でき、横モード制御の容易化をはか
り得る半導体レーザ装置の製造方法を提供するこ
とにある。
An object of the present invention is to enable crystal forming of a second cladding layer on an optical waveguide layer processed into a mesa stripe shape and a first cladding layer using a material containing Al as a constituent element, and to form a second cladding layer on the first cladding layer. It is an object of the present invention to provide a method for manufacturing a semiconductor laser device that can realize a laser having the structure shown in the figure and facilitates transverse mode control.
本発明の骨子は、メサストライプ状に加工され
た光導波路層及び第１クラツド層上への結晶成長
に際し、有機金属気相成長法（以下MOCVD法
と略記する）若しくは分子線エピタキシー法（以
下MBE法と略記する）を用いることにある。
The gist of the present invention is to use metal organic chemical vapor deposition (hereinafter abbreviated as MOCVD) or molecular beam epitaxy (hereinafter MBE) to grow crystals on the optical waveguide layer and first cladding layer processed into mesa stripes. (abbreviated as law).
すなわち、従来のLPE法は熱平衡状態で結晶
成長が進行するのに対して、MOCVD法及び
LPE法では、非熱平衡条件の下で結晶成長が進
行するため、極端な場合は格子定数の異なる基板
の上や単結晶でない基板の上にも結晶成長が起こ
り得る。MOCVD法及びMBE法のこのような特
徴を利用することにより、LPE法では困難な材
料の上へのエピタキシヤル成長が可能であると考
えられる。そして、本発明者等の鋭意研究によれ
ば、MOCVD法若しくはMBE法を用いることに
より、メサストライプ状に形成されたAlを構成
元素として含む光導波路層及び第１クラツド層上
に、良好な結晶成長を行い得ることが確認され
た。 In other words, in the conventional LPE method, crystal growth proceeds in a thermal equilibrium state, whereas in the MOCVD method and
In the LPE method, crystal growth proceeds under non-thermal equilibrium conditions, so in extreme cases, crystal growth may occur on substrates with different lattice constants or on non-single crystal substrates. By utilizing these characteristics of MOCVD and MBE, it is believed that epitaxial growth on materials that are difficult to achieve using LPE is possible. According to intensive research by the present inventors, by using the MOCVD method or the MBE method, good crystallization can be achieved on the optical waveguide layer and the first cladding layer containing Al as a constituent element formed in a mesa stripe shape. It was confirmed that growth could occur.
本発明はこのような点に着目し、半導体レーザ
装置の製造方法において、絶縁物若しくは−
族半導体からなる基板上にAlを構成元素として
含む−族半導体からなる第１導電型の第１ク
ラツド層、−族半導体からなる活性層、Al
を構成元素として含む−族半導体からなる第
２導電型の光導波路層及び第２導電型不純物を高
濃度に添加したバツフア層を上記順に成長形成
し、次いで前記バツフア層、光導波路層及び活性
層を前記第１クラツド層に至る深さまでエツチン
グしてメサストライプ部を形成し、次いで有機金
属気相成長法或いは分子線エピタキシー法を用
い、露出した第１クラツド層及びバツフア層上に
−族半導体からなる第１導電型の第２クラツ
ド層及び−族半導体からなる第２導電型の第
３クラツド層を上記順に成長形成し、しかるのち
前記バツフア層から前記第２クラツド層に不純物
を拡散して該クラツド層のストライプ上を第２導
電型に変換するようにした方法である。 The present invention focuses on such points and provides a method for manufacturing a semiconductor laser device in which an insulator or a -
A first cladding layer of a first conductivity type made of a - group semiconductor containing Al as a constituent element on a substrate made of a group semiconductor, an active layer made of a - group semiconductor, and an active layer made of a - group semiconductor;
A second conductivity type optical waveguide layer made of a − group semiconductor containing as a constituent element and a buffer layer doped with a second conductivity type impurity at a high concentration are grown in the above order, and then the buffer layer, optical waveguide layer, and active layer are formed. A mesa stripe portion is formed by etching to a depth that reaches the first cladding layer, and then a - group semiconductor is etched onto the exposed first cladding layer and buffer layer using metal organic vapor phase epitaxy or molecular beam epitaxy. A second cladding layer of a first conductivity type made of a semiconductor and a third cladding layer of a second conductivity type made of a - group semiconductor are grown in the above order, and then impurities are diffused from the buffer layer into the second cladding layer. This method converts the striped portion of the cladding layer to the second conductivity type.
本発明によれば、Alを構成元素として含むク
ラツド層及び光導波路層を用いる場合にあつて
も、前記第２図に示す如き構造の半導体レーザを
実現することができ、横モード制御の容易化をは
かり得る。また、Alを含む材料を用いているこ
とから、レーザ発振波長を短波長側に制御するこ
とができ、最近特に注目されているビデオ・デイ
スクやDAD（デジタル・オーデイオ・デイスク）
等の読み取り用光源として極めて有効である。
According to the present invention, even when using a cladding layer and an optical waveguide layer containing Al as a constituent element, it is possible to realize a semiconductor laser having the structure shown in FIG. 2, which facilitates transverse mode control. can be measured. In addition, since it uses a material containing Al, it is possible to control the laser oscillation wavelength to the short wavelength side, which is useful for video disks and DADs (digital audio disks), which have been attracting particular attention recently.
It is extremely effective as a light source for reading.
第３図ａ〜ｃは本発明の参考例半導体レーザの
製造工程を示す断面図である。まず、第３図ａに
示す如くＮ−GaAs基板１上に、Ｎ−Al0.45Ga0.55
As層（第１クラツド層）２、アンドープAl0.15
Ga0.85As層（活性層）３及びＰ−Al0.35Ga0.65As
層（光導波路層）１０をLPE法により上記順に
成長形成する。次いで、フオトレジスト等をマス
クとして用い、第３図ｂに示す如く光導波路層１
０及び活性層３を第１クラツド層に至る深さまで
選択エツチングし、メサストライプ部を形成す
る。なお、このエツチングに際しては、
CH3OH、H3PO4、H2O2（体積比３：１：１）等
を用いることができる。
3a to 3c are cross-sectional views showing the manufacturing process of a reference example semiconductor laser of the present invention. First, as shown in FIG. 3a, N-Al 0.45 Ga 0.55
As layer (first cladding layer) 2, undoped Al 0.15
Ga 0.85 As layer (active layer) 3 and P-Al 0.35 Ga 0.65 As
A layer (optical waveguide layer) 10 is grown in the above order by LPE method. Next, using a photoresist or the like as a mask, the optical waveguide layer 1 is formed as shown in FIG. 3b.
0 and the active layer 3 are selectively etched to a depth up to the first cladding layer to form a mesa stripe portion. In addition, when performing this etching,
CH 3 OH, H 3 PO 4 , H 2 O 2 (volume ratio 3:1:1), etc. can be used.
次に、MOCVD法若しくはMBE法を用い、第
３図ｃに示す如く第１クラツド層２及び光導波路
層１０上にＰ−Al0.45Ga0.55As層（第２クラツド
層）４及びＰ−GaAs層（オーミツクコンタクト
層）５を順次成長形成する。ここで、MOCVD
法を用いた場合の詳細を述べる。まず、前記第３
図ｂに示す状態の試料を十分に脱脂洗浄したの
ち、希HCl等によつて表面の酸化層を除去し直ち
に反応炉に入れる。結晶成長温度は750〔℃〕と
し、原料としてはトリメチルガリウム
（（CH3）3Ga）、トリメチルアルミニウム
（（CH3）3Al）及びアルシン（AsH3）を用いた。
Ｐ型ドーパントにはジエチルジンク（C2H5）2Zn
を用いた。また、原料ガス中の族元素（Ga、
Al）と族元素（As）とのモル比は
〔As〕／〔Ga＋Al〕＝20とした。このような
条件下でMOCVD法を実施したところ、第１ク
ラツド層２及び光導波路層１０上に良好な結晶成
長を行うことができた。 Next, using the MOCVD method or the MBE method, as shown in FIG. (Ohmic contact layer) 5 is sequentially grown and formed. Here, MOCVD
The details of the case where the method is used are described below. First, the third
After thoroughly degreasing and cleaning the sample in the state shown in Figure b, the oxidized layer on the surface is removed using dilute HCl or the like, and the sample is immediately placed in a reactor. The crystal growth temperature was 750 [° C.], and the raw materials used were trimethylgallium ((CH 3 ) 3 Ga), trimethylaluminum ((CH 3 ) 3 Al), and arsine (AsH 3 ).
Diethylzinc (C 2 H 5 ) 2 Zn is the P-type dopant.
was used. In addition, group elements (Ga,
The molar ratio of Al) to the group element (As) was set to [As]/[Ga+Al] = 20. When the MOCVD method was carried out under such conditions, good crystal growth could be performed on the first cladding layer 2 and the optical waveguide layer 10.
次に、第３図ｃに示す状態の試料に電流狭窄の
ためのSiO2膜（絶縁層）７及びCr／Au電極８，
９を形成することによつて、前記第２図に示す構
造の半導体レーザが作製されることになる。な
お、基板及び各層の厚さＬ、不純物濃度Ｎは次の
ように設定した。基板１ではＷ＝80〔μｍ〕、ND
＝１×1018〔cm-3〕、第１クラツド層２ではＬ＝１
〔μｍ〕、ND＝３×1017〔cm-3〕、活性層３ではＬ＝
0.12〔μｍ〕、光導波路層１０ではＬ＝0.5〔μｍ〕、
NA＝５×1017〔cm-3〕、第２クラツド層４ではＬ＝
１〔μｍ〕、NA＝５×1017〔cm3〕、オーミツクコン
タクト層５ではＬ＝0.5〔μｍ〕、NA＝１×1019〔cm
-3〕とした。 Next, a SiO 2 film (insulating layer) 7 and a Cr/Au electrode 8 for current confinement were applied to the sample in the state shown in FIG.
By forming 9, a semiconductor laser having the structure shown in FIG. 2 is manufactured. Note that the thickness L and impurity concentration N of the substrate and each layer were set as follows. For substrate 1, W = 80 [μm], N D
= 1×10 18 [cm -3 ], L = 1 in the first cladding layer 2
[μm], N D = 3×10 17 [cm -3 ], L = in active layer 3
0.12 [μm], L=0.5 [μm] in the optical waveguide layer 10,
N A =5×10 17 [cm -3 ], L = in the second cladding layer 4
1 [μm], N A =5×10 17 [cm 3 ], L=0.5 [μm] for ohmic contact layer 5, N A =1×10 19 [cm
-3 ].
かくして作製された半導体レーザは、活性層３
上に設けた光導波路層１０により安定した基本横
モード発振を達成することができ、またAlを構
成材料として含むことから、発振波長を比較的短
波長側に制御することができる。このため、ビデ
オデイスクやDAD等の信号読み取り用光源とし
て用いるのに極めて有効である。また、メサスト
ライプ部を形成する際に、基板１に至る深さまで
ではなく、活性層３の直下までの浅いエツチング
を行えばよく、このエツチングの際の横方向のエ
ツチングを極めて小さくすることができる。この
ため、所望の横モードを再現性良く実現できる。
さらに、活性層３がストライプ状に加工されてい
るので、横モード制御がより確実になる等の利点
がある。第４図は本発明の一実施例に係わる半導
体レーザの概略構成を示す斜視図である。なお、
第２図及び第３図ａ〜ｃと同一部分には同一符号
を付して、その詳しい説明は省略する。この実施
例が先に説明した参考例と異なる点は、前記
SiO2膜７の代りに拡散層を用いて電流狭窄構造
を実現したことにある。すなわち、先の実施例と
同様に第３図ａに示す如く基板１上に第１クラツ
ド層２、活性層３及び光導波路層１０を成長形成
したのち、第５図ａに示す如く光導波路層１０上
にZnを高濃度に添加（Ｐ＞１×1019cm-3）したP+
−GaAs層（Zn拡散層）１１を成長形成する。そ
の後、Zn拡散層１１、光導波路層１０及び活性
層３をクラツド層２に至る深さまで選択エツチン
グして第５図ｂに示す如きメサストライプ部を形
成する。次いで、第５図ｃに示す如くＮ−Al0.45
Ga0.55As層（第３クラツド層）１２、前記第２ク
ラツド層４及びオーミツクコンタクト層５を
MOCVD法により順次成長形成する。ここで、
Ｎ型のドーパントにはセレン化水素（H2Se）を
用いた。また、第３クラツド層１２の厚さＬ及び
不純物濃度Ｎは、Ｌ＝0.5〔μｍ〕、ND＝３×1017
〔cm-3〕とした。 The semiconductor laser thus manufactured has an active layer 3
Stable fundamental transverse mode oscillation can be achieved by the optical waveguide layer 10 provided above, and since Al is included as a constituent material, the oscillation wavelength can be controlled to a relatively short wavelength side. Therefore, it is extremely effective for use as a light source for reading signals from video discs, DADs, etc. Furthermore, when forming the mesa stripe portion, it is only necessary to perform shallow etching to just below the active layer 3, rather than to the depth reaching the substrate 1, and the lateral etching during this etching can be extremely small. . Therefore, a desired transverse mode can be realized with good reproducibility.
Furthermore, since the active layer 3 is processed into a stripe shape, there are advantages such as more reliable transverse mode control. FIG. 4 is a perspective view showing a schematic configuration of a semiconductor laser according to an embodiment of the present invention. In addition,
The same parts as in FIG. 2 and FIGS. 3 a to 3 c are given the same reference numerals, and detailed explanation thereof will be omitted. This example is different from the reference example described above.
The reason is that a current confinement structure is realized by using a diffusion layer instead of the SiO 2 film 7. That is, as in the previous embodiment, the first cladding layer 2, the active layer 3, and the optical waveguide layer 10 are grown on the substrate 1 as shown in FIG. 3a, and then the optical waveguide layer is grown as shown in FIG. 5a. P + with high concentration of Zn added (P>1×10 19 cm -3 ) on 10
-Grow and form a GaAs layer (Zn diffusion layer) 11. Thereafter, the Zn diffusion layer 11, the optical waveguide layer 10, and the active layer 3 are selectively etched to a depth up to the cladding layer 2 to form a mesa stripe portion as shown in FIG. 5b. Next, as shown in Figure 5c, N-Al 0.45
The Ga 0.55 As layer (third cladding layer) 12, the second cladding layer 4 and the ohmic contact layer 5 are
Sequential growth and formation using MOCVD method. here,
Hydrogen selenide (H 2 Se) was used as the N-type dopant. Further, the thickness L and impurity concentration N of the third cladding layer 12 are L=0.5 [μm], N D =3×10 17
[cm -3 ].
次いで、900〔℃〕において４時間程度熱処理を
行い、Zn拡散層１１よりZnを拡散させメサスト
ライプ部上の第３クラツド層１２をＰ型に変換す
る。ここで、上記Zn拡散による拡散領域１３の
不純物濃度はNA＝１×1018〔cm-3〕であつた。 Next, heat treatment is performed at 900[° C.] for about 4 hours to diffuse Zn from the Zn diffusion layer 11 and convert the third cladding layer 12 on the mesa stripe portion to P type. Here, the impurity concentration in the diffusion region 13 due to the Zn diffusion was N A =1×10 18 [cm −3 ].
この後は、第５図ｃの試料の両面に電極８，９
を被着することにより、第４図に示す構造の半導
体レーザが作製されることになる。 After this, the electrodes 8 and 9 are placed on both sides of the sample in Figure 5c.
By depositing this, a semiconductor laser having the structure shown in FIG. 4 is manufactured.
かくして作製された半導体レーザは、拡散領域
１３が電流狭窄構造として作用することになり、
活性層３の発光領域をストライプ状に規定するこ
とができる。このため、先の参考例と同様の効果
を奏するのは勿論、電流狭窄構造としてのSiO2
膜７を必要とせず、その製造がより容易化され
る。また、Zn拡散に際しては光導波路層１０よ
りAlを多く含む第３クラツド層１２の方法が拡
散し易いので、拡散領域１３を活性層３に達する
ことなく第２クラツド層４に達するよう容易に形
成することができる。 In the semiconductor laser thus manufactured, the diffusion region 13 acts as a current confinement structure,
The light emitting region of the active layer 3 can be defined in a stripe shape. Therefore, not only does it have the same effect as the previous reference example, but also SiO 2 as a current confinement structure.
The membrane 7 is not required, making its manufacture easier. Furthermore, when diffusing Zn, the third cladding layer 12 containing more Al than the optical waveguide layer 10 is easier to diffuse, so the diffusion region 13 can be easily formed so as to reach the second cladding layer 4 without reaching the active layer 3. can do.
なお、本発明は上述した各実施例に限定される
ものではない。例えば、前記光導波路層やクラツ
ド層の構成材料としてはAlxGa1-xAs系に限定さ
れるものではなく、AlxGa1-xAsP系やIny（Alx
Ga1-x）1-yＰ系等を用いてもよい。要は、Alを構
成元素として含む−族半導体に適用すること
ができる。また、実施例では第１クラツド層、活
性層及び光導波路層をLPE法で成長形成したが、
これらの層をもMOCVD法やMBE法で成長形成
するようにしてもよい。さらに、基板として−
族半導体の代りに、サフアイア等の絶縁物を用
いることも可能である。また、基板及び各層の厚
さＬや不純物濃度等の条件は、仕様に応じて適宜
変更可能である。その他、本発明の要旨を逸脱し
ない範囲で、種々変形して実施することができ
る。 Note that the present invention is not limited to each of the embodiments described above. For example, the constituent materials of the optical waveguide layer and cladding layer are not limited to Al x Ga 1-x As-based materials, but include Al x Ga 1-x AsP-based materials and In y (Al x
Ga 1-x ) 1-y P system, etc. may also be used. In short, it can be applied to - group semiconductors containing Al as a constituent element. In addition, in the examples, the first cladding layer, active layer, and optical waveguide layer were grown using the LPE method.
These layers may also be grown and formed by MOCVD or MBE. Furthermore, as a substrate -
It is also possible to use an insulator such as sapphire instead of the group semiconductor. Further, conditions such as the thickness L of the substrate and each layer, impurity concentration, etc. can be changed as appropriate according to specifications. In addition, various modifications can be made without departing from the gist of the present invention.
第１図及び第２図はそれぞれ従来の半導体レー
ザの概略構造を示す斜視図、第３図ａ〜ｃは本発
明の参考例としての半導体レーザの製造工程を示
す断面図、第４図は本発明の一実施例に係わる半
導体レーザの概略構造を示す斜視図、第５図ａ〜
ｃは上記本発明の一実施例を説明するための工程
断面図である。
１……基板、２……第１クラツド層、３……活
性層、４……第２クラツド層、５……オーミツク
コンタクト層、６……埋め込み層、７……絶縁
層、８，９……電極、１０……光導波路層、１１
……Zn拡散層、１２……第３クラツド層、１３
……拡散領域、１４……イオン注入層（高抵抗
層）。
1 and 2 are perspective views showing the schematic structure of a conventional semiconductor laser, FIGS. 3 a to 3 c are cross-sectional views showing the manufacturing process of a semiconductor laser as a reference example of the present invention, and FIG. 4 is a perspective view showing the schematic structure of a conventional semiconductor laser. Perspective views showing the schematic structure of a semiconductor laser according to an embodiment of the invention, FIGS.
c is a process sectional view for explaining one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First cladding layer, 3... Active layer, 4... Second cladding layer, 5... Ohmic contact layer, 6... Buried layer, 7... Insulating layer, 8, 9 ... Electrode, 10 ... Optical waveguide layer, 11
...Zn diffusion layer, 12 ... Third cladding layer, 13
. . . Diffusion region, 14 . . . Ion implantation layer (high resistance layer).
Claims (1)
上にAlを構成元素として含む−族半導体か
らなる第１導電型の第１クラツド層、−族半
導体からなる活性層、Alを構成元素として含む
−族半導体からなる第２導電型の光導波路層
及び第２導電型不純物を高濃度に添加したバツフ
ア層を上記順に成長形成する工程と、前記バツフ
ア層、光導波路層及び活性層を前記第１クラツド
層に至る深さまでエツチングしてメサストライプ
部を形成する工程と、次いで有機金属気相成長法
或いは分子線エピタキシー法を用い、露出した第
１クラツド層及びバツフア層上に−族半導体
からなる第１導電型の第２クラツド層及び−
族半導体からなる第２導電型の第３クラツド層を
上記順に成長形成する工程と、次いで前記バツフ
ア層から前記第２クラツド層に不純物を拡散して
該クラツド層のストライプ上を第２導電型に変換
する工程とを含むことを特徴とする半導体レーザ
装置の製造方法。 ２ 前記第１乃至第３のクラツド層、光導波路層
及びバツフア層は、AlGaAs系、AlGaAsP系或
いはInAlGaP系の材料からなるものであること
を特徴とする特許請求の範囲第１項記載の半導体
レーザ装置の製造方法。[Scope of Claims] 1. A first cladding layer of a first conductivity type made of a - group semiconductor containing Al as a constituent element, an active layer made of a - group semiconductor, and Al formed on a substrate made of an insulator or a - group semiconductor. A step of growing in the above order an optical waveguide layer of a second conductivity type made of a - group semiconductor containing a - group semiconductor and a buffer layer doped with impurities of the second conductivity type in the above order, and forming the buffer layer, the optical waveguide layer and the active layer. A step of etching to a depth reaching the first cladding layer to form a mesa stripe portion, and then using a metal organic vapor phase epitaxy method or a molecular beam epitaxy method to form a - group semiconductor on the exposed first cladding layer and buffer layer. a second cladding layer of the first conductivity type consisting of -
a step of growing a third cladding layer of a second conductivity type made of a group semiconductor in the above order, and then diffusing impurities from the buffer layer into the second cladding layer to make the stripes of the cladding layer a second conductivity type. 1. A method of manufacturing a semiconductor laser device, comprising the step of converting. 2. The semiconductor laser according to claim 1, wherein the first to third cladding layers, optical waveguide layers, and buffer layers are made of AlGaAs-based, AlGaAsP-based, or InAlGaP-based materials. Method of manufacturing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP445683A JPS59129473A (en) | 1983-01-14 | 1983-01-14 | Semiconductor laser device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP445683A JPS59129473A (en) | 1983-01-14 | 1983-01-14 | Semiconductor laser device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59129473A JPS59129473A (en) | 1984-07-25 |
| JPH021386B2 true JPH021386B2 (en) | 1990-01-11 |
Family
ID=11584648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP445683A Granted JPS59129473A (en) | 1983-01-14 | 1983-01-14 | Semiconductor laser device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59129473A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766992B2 (en) * | 1984-12-21 | 1995-07-19 | ソニー株式会社 | AlGaInP semiconductor laser and manufacturing method thereof |
| JP2525776B2 (en) * | 1986-07-15 | 1996-08-21 | 株式会社東芝 | Method for manufacturing semiconductor device |
| US5119388A (en) * | 1989-02-24 | 1992-06-02 | Laser Photonics, Inc. | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
| US5028563A (en) * | 1989-02-24 | 1991-07-02 | Laser Photonics, Inc. | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
| JP2586826B2 (en) * | 1994-06-21 | 1997-03-05 | ソニー株式会社 | AlGaInP-based semiconductor laser and its manufacturing method |
| US6567443B2 (en) * | 1999-09-29 | 2003-05-20 | Xerox Corporation | Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes |
| JP2006005167A (en) * | 2004-06-17 | 2006-01-05 | Sumitomo Electric Ind Ltd | Semiconductor optical element |
| JP4461980B2 (en) | 2004-09-22 | 2010-05-12 | 住友電気工業株式会社 | Semiconductor optical device |
| JP4424223B2 (en) | 2005-03-01 | 2010-03-03 | 住友電気工業株式会社 | Semiconductor optical device |
| JP5463760B2 (en) | 2009-07-02 | 2014-04-09 | 三菱電機株式会社 | Optical waveguide integrated semiconductor optical device and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS526093A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Production method of semiconductor device |
-
1983
- 1983-01-14 JP JP445683A patent/JPS59129473A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS526093A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Production method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59129473A (en) | 1984-07-25 |
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