JPH0212029B2 - - Google Patents

Info

Publication number
JPH0212029B2
JPH0212029B2 JP56089240A JP8924081A JPH0212029B2 JP H0212029 B2 JPH0212029 B2 JP H0212029B2 JP 56089240 A JP56089240 A JP 56089240A JP 8924081 A JP8924081 A JP 8924081A JP H0212029 B2 JPH0212029 B2 JP H0212029B2
Authority
JP
Japan
Prior art keywords
insulating film
region
electrode
source
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56089240A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57204161A (en
Inventor
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56089240A priority Critical patent/JPS57204161A/ja
Publication of JPS57204161A publication Critical patent/JPS57204161A/ja
Publication of JPH0212029B2 publication Critical patent/JPH0212029B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56089240A 1981-06-09 1981-06-09 Manufacture of semiconductor device Granted JPS57204161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56089240A JPS57204161A (en) 1981-06-09 1981-06-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56089240A JPS57204161A (en) 1981-06-09 1981-06-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57204161A JPS57204161A (en) 1982-12-14
JPH0212029B2 true JPH0212029B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=13965214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56089240A Granted JPS57204161A (en) 1981-06-09 1981-06-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57204161A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2508782B2 (ja) * 1988-01-27 1996-06-19 日本電気株式会社 Ｃｍｏｓ型半導体装置の製造方法
US5759869A (en) * 1991-12-31 1998-06-02 Sgs-Thomson Microelectronics, Inc. Method to imporve metal step coverage by contact reflow

Also Published As

Publication number Publication date
JPS57204161A (en) 1982-12-14

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